Fabrication of Large-Area Organic Thin Film Transistor Array with Highly Uniform Water-Borne Polyimide Gate Dielectric via Green Solvent-Engineered Bar-Coating Process (Adv. Electron. Mater. 11/2023)

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2023-11-10 DOI:10.1002/aelm.202370048
Jinha Ha, Dongkyu Kim, Hyunjin Park, Sungmi Yoo, Yujin So, Jinsoo Kim, Jongmin Park, Jong Chan Won, Yun Ho Kim
{"title":"Fabrication of Large-Area Organic Thin Film Transistor Array with Highly Uniform Water-Borne Polyimide Gate Dielectric via Green Solvent-Engineered Bar-Coating Process (Adv. Electron. Mater. 11/2023)","authors":"Jinha Ha,&nbsp;Dongkyu Kim,&nbsp;Hyunjin Park,&nbsp;Sungmi Yoo,&nbsp;Yujin So,&nbsp;Jinsoo Kim,&nbsp;Jongmin Park,&nbsp;Jong Chan Won,&nbsp;Yun Ho Kim","doi":"10.1002/aelm.202370048","DOIUrl":null,"url":null,"abstract":"<p><b>Organic Thin Film Transistors</b></p><p>In article number 2300362, Yun Ho Kim and co-workers present a uniform water-borne polyimide thin film as a gate dielectric layer in large-scale flexible organic thin film transistors (OTFTs) over 100 cm<sup>2</sup>. A bar-coating technique is used to adjust coating solution surface tension with an alcohol as a co-solvent. This approach yields low standard deviation and nearly 100% device yield in fabricating 500 OTFT devices.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"9 11","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202370048","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202370048","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Organic Thin Film Transistors

In article number 2300362, Yun Ho Kim and co-workers present a uniform water-borne polyimide thin film as a gate dielectric layer in large-scale flexible organic thin film transistors (OTFTs) over 100 cm2. A bar-coating technique is used to adjust coating solution surface tension with an alcohol as a co-solvent. This approach yields low standard deviation and nearly 100% device yield in fabricating 500 OTFT devices.

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绿色溶剂工程棒涂法制备高均匀水性聚酰亚胺栅极介质的大面积有机薄膜晶体管阵列。板牙。11/2023)
有机薄膜晶体管在文章编号2300362中,Yun Ho Kim及其同事提出了一种均匀的水性聚酰亚胺薄膜作为栅极介电层,用于超过100 cm2的大型柔性有机薄膜晶体管(OTFTs)。采用棒状涂层技术,以醇为助溶剂调节涂层溶液的表面张力。在制造500个OTFT器件时,这种方法的标准偏差很低,器件成品率接近100%。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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