10-nanosecond dead time and low afterpulsing with a free-running reach-through single-photon avalanche diode.

S. Farina, I. Labanca, G. Acconcia, M. Ghioni, I. Rech
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引用次数: 1

Abstract

The reduction of detector dead time represents an enabling factor in several photon counting applications. In this work, we investigate the free-running operation of reach-through single-photon avalanche diodes (SPADs) at ultra-low dead times. By employing a fast active quenching circuit with direct bonding to the detector, we are able to achieve a 10 ns dead time with a thick SPAD by Excelitas, still maintaining extremely low afterpulsing probabilities (below 1.5%).
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10纳秒的死区时间和低后脉冲与自由运行的通达单光子雪崩二极管。
探测器死区时间的缩短是若干光子计数应用中的一个有利因素。在这项工作中,我们研究了可达通单光子雪崩二极管(spad)在超低死区时间下的自由运行。通过采用与探测器直接连接的快速有源淬火电路,我们能够在Excelitas的厚SPAD上实现10 ns的死区时间,同时仍然保持极低的后脉冲概率(低于1.5%)。
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