Jin Meng, Haotian Zhu, Dehai Zhang, Hao Li, Yuh-Jing Li, Siyu Liu
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引用次数: 0
Abstract
Compared with Gallium Arsenide material, GaN device has better power endurance characteristics, and hence has great potential in the development of high power source. This paper proposes a heterojunction structure of GaN Schottky diode to improve the electron mobility of the device, and the cut-off frequency is over 250 GHz. Furthermore, a 120 GHz doubler is designed based on the proposed device. The simulated result shows that the conversion efficiency reaches 15% when the input power is 1 W.
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