Design methodology of the embedded DRAM with the virtual socket architecture

T. Yamauchi, M. Kinoshita, T. Amano, K. Dosaka, K. Arimoto, H. Ozaki, M. Yamada, T. Yoshihara
{"title":"Design methodology of the embedded DRAM with the virtual socket architecture","authors":"T. Yamauchi, M. Kinoshita, T. Amano, K. Dosaka, K. Arimoto, H. Ozaki, M. Yamada, T. Yoshihara","doi":"10.1109/CICC.2000.852664","DOIUrl":null,"url":null,"abstract":"This paper proposes the virtual socket architecture in order to reduce the design turn around time (TAT) of the embedded DRAM. By using the proposed architecture, the DRAM control circuitry is provided as the software macro to take advantage of the automated tools based on the synchronous circuit design. With array generator technology, this architecture can achieve high quality, quick turn around time (QTAT) flexible eDRAM design almost the same as the CMOS ASIC. We applied this virtual socket architecture to the 0.18 /spl mu/m embedded DRAM test device and confirmed over 166 MHz operation.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":"78 4 1","pages":"271-274"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This paper proposes the virtual socket architecture in order to reduce the design turn around time (TAT) of the embedded DRAM. By using the proposed architecture, the DRAM control circuitry is provided as the software macro to take advantage of the automated tools based on the synchronous circuit design. With array generator technology, this architecture can achieve high quality, quick turn around time (QTAT) flexible eDRAM design almost the same as the CMOS ASIC. We applied this virtual socket architecture to the 0.18 /spl mu/m embedded DRAM test device and confirmed over 166 MHz operation.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于虚拟套接字架构的嵌入式DRAM设计方法
为了缩短嵌入式DRAM的设计周转时间,提出了虚拟套接字结构。采用所提出的体系结构,将DRAM控制电路作为软件宏提供,以利用基于同步电路设计的自动化工具。采用阵列发生器技术,该架构可以实现与CMOS ASIC几乎相同的高质量,快速周转时间(QTAT)灵活的eDRAM设计。我们将这种虚拟插座架构应用于0.18 /spl mu/m嵌入式DRAM测试设备,并确认了超过166 MHz的操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 10-bit 1-GSample/s Nyquist current-steering CMOS D/A converter Physical processes of phase noise in differential LC oscillators Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration Complete noise analysis for CMOS switching mixers via stochastic differential equations A 6-bit 1 GHz acquisition speed CMOS flash ADC with digital error correction
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1