M. Haeussler, J. Brandl, E. Schomburg, K. Renk, D. Pavel’ev, Y. Koschurinov
{"title":"Generation of microwaves at frequencies above 100 GHz with a GaAs/AlAs superlattice","authors":"M. Haeussler, J. Brandl, E. Schomburg, K. Renk, D. Pavel’ev, Y. Koschurinov","doi":"10.1109/ICIMW.2002.1076082","DOIUrl":null,"url":null,"abstract":"We report on the generation of microwaves at frequencies above 100 GHz with a semiconductor superlattice device. We made use of the negative differential conductivity of an n-doped GaAs/AlAs superlattice. In this contribution we report on a higher harmonic superlattice oscillator for radiation at 175 GHz with a power of the order of 100 μW. The oscillator consisted of a superlattice device, mounted in a cavity and connected via a coaxial line with a bandstop filter (stopband from 75 GHz to 200 GHz) to a bias supply. Beside the emission at 175 GHz, oscillations at 35 GHz and 70 GHz occurred in the bias circuit.","PeriodicalId":23431,"journal":{"name":"Twenty Seventh International Conference on Infrared and Millimeter Waves","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty Seventh International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2002.1076082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
We report on the generation of microwaves at frequencies above 100 GHz with a semiconductor superlattice device. We made use of the negative differential conductivity of an n-doped GaAs/AlAs superlattice. In this contribution we report on a higher harmonic superlattice oscillator for radiation at 175 GHz with a power of the order of 100 μW. The oscillator consisted of a superlattice device, mounted in a cavity and connected via a coaxial line with a bandstop filter (stopband from 75 GHz to 200 GHz) to a bias supply. Beside the emission at 175 GHz, oscillations at 35 GHz and 70 GHz occurred in the bias circuit.
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