Double Shottcky of NiOx/graphene/Si for enhance efficiency solar cells

Abstract

We have used electro-deposition, a simple and effective method, to fabricate a NiOx/graphene (PMS) bilayer Shottcky junction. An n-Si/graphene (NMS) Shottcky junction was then deposited on top of the NiOx/graphene bilayer Shottcky junction to form a double Shottcky solar cell. This double Shottcky combination thus contains an n-type Si/grphene (NMS) Shottcky junction and a p-type NiOx/graphene (PMS) Shottcky junction, an overall n-p junction. The thicknesses of the NiOx film are different for different junctions. The NiOx films performed excellently as the p-type substance for the solar cells. SEM, EDX, UV, XRD, and Raman techniques were used to study the physical properties of these solar cell materials and devices. I-V studies were also carried out on these samples. The I-V characteristic curves show that the power conversion efficiency improves when the thickness of NiOx thin film is increased.