Dislocations in Deformed Cu-Ni Single Crystals

S. Yoshioka, Y. Nakayama, T. Ito
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引用次数: 7

Abstract

The distributions, arrangement and density of dislocations in singlecrystals of Cu-Al alloys deformed in tension are studied by means of the etch pit technique. The observations of etchpits are made on the surfaces parallel to the (111) plane or the surfaces cut out parallel to the (111) and (111) planes of each specimen where the (111) plane is the primary slip plane. As the Al concentration increases the multiplied dislocations tend to arrange along the traces of the intersections between the observed surface and the slip planes. The distribution of the primary dislocation of the primary disloccrimary disloccations observed on the {111} plane other than the (111) plane changes from the Cu type to the Liider's band propagation type as the Al concentration is increased. On the (111) plane the dislocations lying on the (111) plane are observed early in stage L but the dislocations lying on the (111) and (111) planes are multiplied inhomogeneously in the transition region from stage I to stage II. These results may suggest the formation of the Lomer-Cottrell dislocations at this strain. The density of the dislocations observed on the (111) plane is higher than that on the (111) plane, but the difference is lessened with increasing strain. If the Cu-2.5 at % Al composition, the density of dislocations b erved on these two planes 19 of the same order at the beginning of stage II, while in the Cu-15 at % Al composition there is a larger difference between th em even at the largest stress applied. In stage I the dislocation density is proportional to the shear stress. In stage II the square root of the dislocation density is proportional to the shear stress. This relation holds well not only for the primary dislocation density but also for the
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变形Cu-Ni单晶中的位错
利用蚀坑技术研究了Cu-Al合金拉伸变形单晶中位错的分布、排列和密度。在与(111)平面平行的表面或与(111)和(111)平面平行的表面上进行蚀刻坑的观察,其中(111)平面为主要滑移面。随着Al浓度的增加,多重位错倾向于沿观察表面与滑移面相交的轨迹排列。随着Al浓度的增加,{111}面(非(111)面)上观察到的初级位错的分布由Cu型转变为Liider波段传播型。在(111)平面上,(111)平面上的位错在L阶段早期可见,但(111)和(111)平面上的位错在I阶段到II阶段的过渡区域不均匀地倍增。这些结果可能表明在该应变下形成了lomo - cottrell位错。(111)面的位错密度大于(111)面的位错密度,但随着应变的增加,两者的差异减小。当Cu-2.5含% Al时,在第二阶段开始时,这两个平面上的位错密度为同一数量级,而在Cu-15含% Al时,即使施加最大的应力,它们之间的位错密度也有较大的差异。在第一阶段,位错密度与剪应力成正比。在第二阶段,位错密度的平方根与剪应力成正比。这种关系不仅适用于初级位错密度,而且适用于初级位错密度
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