{"title":"Low temperature aluminum induced crystallization of HWCVD deposited a-Si:H","authors":"V. Pandey, R. Dusane","doi":"10.1109/ICANMEET.2013.6609307","DOIUrl":null,"url":null,"abstract":"Present work provides a comprehensive study on Aluminum induced crystallization (AIC) of Hot Wire Chemical Vapour Deposited (HWCVD) a-Si:H. Different parameters, namely, layer sequence, annealing temperature and time, were studied to correlate their impact on the quality of nc-Si:H films obtained by AIC. Device quality nc-Si:H thin films at a very low temperature of 473 K were obtained for the layer sequence of substrate/a-Si:H/Al.","PeriodicalId":13708,"journal":{"name":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","volume":"245 1","pages":"357-359"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICANMEET.2013.6609307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Present work provides a comprehensive study on Aluminum induced crystallization (AIC) of Hot Wire Chemical Vapour Deposited (HWCVD) a-Si:H. Different parameters, namely, layer sequence, annealing temperature and time, were studied to correlate their impact on the quality of nc-Si:H films obtained by AIC. Device quality nc-Si:H thin films at a very low temperature of 473 K were obtained for the layer sequence of substrate/a-Si:H/Al.
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