Design and analysis of SAW pressure sensing element based on IDT/AlN/Mo/diamond multilayered structure

IF 1 3区 物理与天体物理 Q4 ACOUSTICS Acta Acustica Pub Date : 2022-01-01 DOI:10.1051/aacus/2022038
Xiaoxin Ma, Q. Xiao, Yanping Fan, X. Ji
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Abstract

The multilayer structure of surface acoustic wave sensor is an important development direction of surface acoustic wave devices in recent years. In this paper, the IDT/AlN/Mo/diamond structure of surface acoustic wave pressure sensing element is modeled and simulated. The influence of the thickness of AlN and IDT on pressure coefficient frequency and K2 were simulated and analyzed. The performance of surface acoustic wave pressure sensing element is compared when the metal layer is Mo, no metal layer and the metal layer is Pt. Finally, the relationship between frequency variation and pressure of the designed multilayer surface acoustic wave pressure sensing element is obtained. This research provides a good guidance for the design of surface acoustic wave pressure sensor.
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基于IDT/AlN/Mo/金刚石多层结构的SAW压敏元件设计与分析
多层结构的表面声波传感器是近年来表面声波器件的一个重要发展方向。本文对表面声波压力传感元件的IDT/AlN/Mo/金刚石结构进行了建模和仿真。模拟分析了AlN和IDT厚度对压力系数、频率和K2的影响。比较了金属层为Mo、无金属层和金属层为Pt时表面声波压敏元件的性能,最后得到了所设计的多层表面声波压敏元件的频率变化与压力的关系。该研究为表面声波压力传感器的设计提供了良好的指导。
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来源期刊
Acta Acustica
Acta Acustica ACOUSTICS-
CiteScore
2.80
自引率
21.40%
发文量
0
审稿时长
12 weeks
期刊介绍: Acta Acustica, the Journal of the European Acoustics Association (EAA). After the publication of its Journal Acta Acustica from 1993 to 1995, the EAA published Acta Acustica united with Acustica from 1996 to 2019. From 2020, the EAA decided to publish a journal in full Open Access. See Article Processing charges. Acta Acustica reports on original scientific research in acoustics and on engineering applications. The journal considers review papers, scientific papers, technical and applied papers, short communications, letters to the editor. From time to time, special issues and review articles are also published. For book reviews or doctoral thesis abstracts, please contact the Editor in Chief.
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