Study of Tm-Doped Aluminosilicate Films for Integration of Lasers on a SOI Silicon Photonics Platform

C. Mitchell, Amy S. K. Tong, J. Wilkinson, J. Mackenzie
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Abstract

Thulium-doped glass has recently been highlighted as a potential candidate for amplifiers in a new telecommunications window, due to its potential for strong gain across a broad bandwidth in the 2-micron regime [1]. However, the use of such technology in a silicon or planar platform has received much less attention [2,3]. Lack of on-chip lasers is an obstacle to progress in silicon photonics with much research focused on mounting processed III-V lasers, bonding gain material, or the deposition of gain material onto SOI wafers.
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tm掺杂铝硅酸盐薄膜在SOI硅光子平台上集成激光器的研究
掺铥玻璃最近被强调为新的电信窗口放大器的潜在候选,因为它在2微米范围内具有在宽带宽上获得强增益的潜力[1]。然而,在硅或平面平台上使用这种技术受到的关注要少得多[2,3]。片上激光器的缺乏阻碍了硅光子学的发展,许多研究都集中在安装加工III-V激光器,键合增益材料或在SOI晶圆上沉积增益材料上。
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