{"title":"Molecular Beam Epitaxy Growth and Characterization of AlGaN Epilayer in the Nitrogen-rich Condition on Si Substrate","authors":"Qihua Zhang, Xue Yin, Songrui Zhao","doi":"10.1109/PN52152.2021.9597930","DOIUrl":null,"url":null,"abstract":"In this work, we demonstrate AlGaN epilayer in the nitrogen-rich condition on Si by molecular beam epitaxy. The epilayer is further confirmed to be nitrogen-polar.","PeriodicalId":6789,"journal":{"name":"2021 Photonics North (PN)","volume":"15 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2021-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Photonics North (PN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PN52152.2021.9597930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this work, we demonstrate AlGaN epilayer in the nitrogen-rich condition on Si by molecular beam epitaxy. The epilayer is further confirmed to be nitrogen-polar.
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