{"title":"Gas sensor device creation","authors":"S. Nagirnyak, T. Dontsova","doi":"10.1109/NAP.2017.8190193","DOIUrl":null,"url":null,"abstract":"The paper considers the structure of typical semiconductor gas sensor and describes the main stages of device production. Attention is focused on processes for creation of each device part. The influence of topology and geometry of heater element and measured electrodes is presented.","PeriodicalId":6516,"journal":{"name":"2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)","volume":"32 1","pages":"01NNPT13-1-01NNPT13-4"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAP.2017.8190193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The paper considers the structure of typical semiconductor gas sensor and describes the main stages of device production. Attention is focused on processes for creation of each device part. The influence of topology and geometry of heater element and measured electrodes is presented.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
