Optical bandgap and width of Urbach tail of lithium doped zinc oxide films deposited by SILAR method

Rakhesh Vamadevan, Vaisakh Rajendra Kumar, Jerry Saji
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Abstract

Undoped and Lithium (Li) doped Zinc Oxide (ZnO)films were prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) technique using 0.1M Zinc Sulphate with Ammonia as the cationic solution. Doping is done at different atomic weight percentage (atm. wt%) 5, 10 and 15 by adding Lithium Chloride to the cationic solution. The samples were annealed at 500◦C for one hour after deposition. The UV-Visible Transmittance and Absorbance of the samples were recorded from 250nm to 900nm.The reflectance data of the samples were estimated and the plot of reflectance suggested that the quality of the films is good except for Li:ZnO film at 5atm.wt%.The Optical constants ’n’ and ’k’ were calculated for different incident wavelengths on the samples. The variation of optical constants with incident wavelengths suggested that the Li: ZnO sample at 5atm.wt% has relatively high values when compared to other samples. The Urbach energy (Ee) or width of band tail is calculated from the (lnα-hν) plot and the Optical bandgap energy of the samples were calculated fron the (αhν)2 − hν plot. The bandgap energy was observed to be high for the undoped samples and decreases to normal value for 5atm.wt% sample. The bandgap energy again increases with doping concentration. The Urbach energy is found to be increasing with increase in doping concentration. These variations could be explained using the amorphous-crystalline nature and defect related effects in the samples due to doping.
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SILAR法制备掺杂锂氧化锌薄膜的光学带隙和乌尔巴赫尾宽度
以0.1M硫酸锌为阳离子溶液,以氨为阳离子溶液,采用连续离子层吸附反应(SILAR)技术制备了未掺杂和掺杂锂的氧化锌(ZnO)薄膜。在不同的原子量百分比(atm)下进行掺杂。wt%) 5、10和15,方法是在阳离子溶液中加入氯化锂。沉积后,样品在500℃下退火1小时。在250nm ~ 900nm范围内记录样品的紫外-可见光透过率和吸光度。对样品的反射率数据进行了估计,反射率图表明,除了Li:ZnO薄膜在5atm.wt%时的质量外,其他薄膜的质量都很好。计算了不同入射波长下样品的光学常数n和k。光学常数随入射波长的变化表明,在5atm下Li: ZnO样品。与其他样本相比,Wt %的值相对较高。通过(lnα-hν)图计算了样品的乌尔巴赫能(Ee)或带尾宽度,通过(αhν)2−hν图计算了样品的光学带隙能。未掺杂样品的带隙能较高,在5atm时降至正常值。wt %样本。带隙能量随着掺杂浓度的增加而增加。发现乌尔巴赫能随掺杂浓度的增加而增加。这些变化可以用非晶性质和由于掺杂导致的样品缺陷相关效应来解释。
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