K.H Chae , J.H Son , G.S Chang , H.B Kim , J.Y Jeong , S Im , J.H Song , K.J Kim , H.K Kim , C.N Whang
{"title":"Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers","authors":"K.H Chae , J.H Son , G.S Chang , H.B Kim , J.Y Jeong , S Im , J.H Song , K.J Kim , H.K Kim , C.N Whang","doi":"10.1016/S0965-9773(99)00414-6","DOIUrl":null,"url":null,"abstract":"<div><p><span>Visible photoluminescence from silicon nanocrystals embedded in SiO</span><sub>2</sub><span> matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO</span><sub>2</sub>/Si/SiO<sub>2</sub><span> films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO</span><sub>2</sub><span> matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.</span></p></div>","PeriodicalId":18878,"journal":{"name":"Nanostructured Materials","volume":"11 8","pages":"Pages 1239-1243"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0965-9773(99)00414-6","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanostructured Materials","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0965977399004146","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.
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