Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

K.H Chae , J.H Son , G.S Chang , H.B Kim , J.Y Jeong , S Im , J.H Song , K.J Kim , H.K Kim , C.N Whang
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引用次数: 13

Abstract

Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

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SiO2/Si/SiO2混合离子束层的可见光致发光
采用离子束混合的方法,研究了硅纳米晶包埋在SiO2基体中的可见光致发光。ar激光(457.9 nm)激发的SiO2/Si/SiO2混合离子束薄膜的光致发光光谱比传统离子注入方法制备的薄膜更强,发光峰中心位于720 nm。采用高分辨透射电镜对SiO2基体中纳米晶的形成进行了验证。红色发光是由离子束混合产生的硅纳米晶体引起的。
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Nanostructured Materials Properties of Nanostructured Materials Nanostructured Materials for Photonic Applications Synthesis and TEM study of nanoparticles and nanocrystalline thin films of silver by high pressure sputtering Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers
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