Electrical characterization of through silicon vias (TSVs) with an on chip bus driver for 3D IC integration

S. Sheu, Z. H. Lin, C. S. Lin, J. Lau, S. H. Lee, K. Su, T. Ku, S. H. Wu, J. Hung, P. S. Chen, S. Lai, W. Lo, M. Kao
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引用次数: 2

Abstract

In this study, an on chip bus driver TEG (test element group) has been developed for the data transmission performance at TSVs for 3D IC integration. The on chip bus driver TEG consists of transceiver (TX), receiver (RX) and TSV group which has 2, 4 and 8 TSVs for the analysis of the TSV transmission performance with different load effects which are caused by different number (2, 4, and 8) of chip stack (each chip is with one TSV). This chip has been made by TSMC's 0.18μm process (FEOL) and ITRI's BEOL process. The square chip area is 1.69mm2 and power supply voltage is 1.8V with 30μm diameter TSVs on 30μm pitch and 100μm depth. Finally, a design guide line and a test tool will be proposed with the present on chip bus TEG.
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用于3D集成电路的片上总线驱动的硅通孔(tsv)的电气特性
本研究针对3D集成电路中tsv的数据传输性能,开发了一种片上总线驱动器TEG(测试元件组)。片上总线驱动器TEG由收发器(TX)、接收器(RX)和TSV组组成,TSV组分别有2、4和8个TSV,用于分析不同芯片堆栈数(2、4和8)(每个芯片有一个TSV)引起的不同负载效应下的TSV传输性能。该芯片采用台积电的0.18μm工艺(FEOL)和工研院的BEOL工艺制造。方形芯片面积为1.69mm2,电源电压为1.8V, tsv直径为30μm,间距为30μm,深度为100μm。最后,结合目前的片上总线TEG,提出了设计指南和测试工具。
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Parasitic electrical and electromagnetic effects Heat management Passive electronic components Interconnection technology Reliability and maintainability
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