A Non-destructive Condition Assessment Method for DBC Substrate: Dielectric Measurement

Zhuolin Cheng, Yiwei Long, Kangning Wu, Chuang Zhang, Hang Fu, Shihang Wang, Jianying Li, Shenghe Wang
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Abstract

Direct bonding copper (DBC) substrate is employed in high power density modules, improving its reliability is of critical significance for the safety of power electronic system. In this paper, thermal cycling ageing from -55°C to 150°C was conducted on alumina DBC substrate. Both the variation of interface structures and dielectric properties were obtained in the failure process. Based on the experimental results, the substrate damaged at ~70 cycles due to the thermal expansion coefficient (CTE) mismatch between copper and ceramic. After 45 cycles, copper/ceramic interface turned rougher. Equivalent capacitance (Ceq) was found to be almost unchanged at ~115.8 pF. While tanδ increased from 6.2×10−4 to 1.3×10−3 since the initiation of micro cracks. Afterwards, dramatic drop of Ceq and tanδ was noticed, with Ceq decreased from 115.8 pF to 83.0 pF and tanδ declined to 4.5×10−4. Besides, cliff shaped structure was found around the crack point. It is convinced that, propagation of micro cracks broadened the air gap between copper and ceramic, finally diminished the Ceq. Obviously, the turning point of Ceq is an important indicator in thermal cycling fatigue. Dielectric measurement might be an effective non-destructive technique for condition assessment of DBC substrate.
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DBC衬底无损状态评估方法:介电测量
高功率密度模块采用直接键合铜(DBC)基板,提高其可靠性对电力电子系统的安全运行具有重要意义。本文对氧化铝DBC衬底进行了-55℃~ 150℃的热循环老化。在破坏过程中得到了界面结构和介电性能的变化。实验结果表明,在~70次循环时,由于铜与陶瓷之间的热膨胀系数(CTE)不匹配导致衬底损坏。经过45次循环后,铜/陶瓷界面变得更加粗糙。等效电容(Ceq)在~115.8 pF时几乎没有变化,而tanδ从6.2×10−4增加到1.3×10−3。之后Ceq和tanδ急剧下降,Ceq从115.8 pF下降到83.0 pF, tanδ下降到4.5×10−4。此外,在裂缝点周围发现了悬崖状结构。结果表明,微裂纹的扩展扩大了铜与陶瓷之间的气隙,最终降低了Ceq。显然,Ceq的转折点是热循环疲劳的一个重要指标。介电测量是一种有效的无损检测DBC衬底状态的技术。
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