Using broad-band irradiance data to model the short circuit response of aSi modules

H. Beyer, T. O. Saetre, G. Yordanov
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引用次数: 4

Abstract

aSi modules show large variations in their response to the incoming irradiance as measured by broad-band irradiance sensors, making the check and prediction of their performance difficult when only broad-band data are available. One approach to overcome this difficulty is given by the use of detailed models to estimate the irradiance spectra from the broad-band data. Here, it is tested to what degree the detailed modeling could be substituted by a semi-empirical approach to reflect the modules response based on but the information on direct and diffuse irradiance and solar geometry. The model performance is measured by its capability to give the correct monthly mean short-circuit current together with a reasonable R2 value of the scatter of modeled and measured data. A first test of a respective model has shown reasonable results.
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利用宽带辐照度数据模拟aSi模块的短路响应
通过宽带辐照度传感器测量,aSi模块对入射辐照度的响应变化很大,这使得只有宽带数据可用时难以检查和预测其性能。克服这一困难的一种方法是利用详细的模型从宽带数据估计辐照光谱。在这里,测试了详细建模在多大程度上可以被半经验方法所取代,以反映基于直接和漫射辐照度和太阳几何形状信息的模块响应。该模型的性能是通过其能够给出正确的月平均短路电流以及合理的模型和测量数据散点的R2值来衡量的。对各自模型的第一次测试显示出合理的结果。
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