Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744932
S. Thibert, J. Jourdan, B. Bechevet, J. Faissat, S. Mialon, D. Chaussy, N. Reverdy-Bruas, D. Beneventi
The screen printing process applied to the front side metallization of silicon solar cell was studied with a full factorial 324161 design of experiments on an industrial line. Four commercially silver pastes from different suppliers, six apertures, and nine stainless screens were used to analyze the printing results of two hundred and sixteen combinations. The fingers geometrical properties, the line resistivity, and the contact resistivity were inputted in a power loss simulation program to compute the optimal fingers spacing and the theoretical efficiency for each combination. The relative contribution and the effect of all factors and interactions on the solar cell efficiency were calculated to find out general guidelines for process optimization. Finally, a confirmation test was performed on mixed batches of 15.6 × 15.6 cm2, 200 μm thick Cz-Si solar cells to validate assumptions. With an optimized process a maximal 19.2 % efficiency was reached.
{"title":"Combining design of experiments and power loss computations to study the screen printing process","authors":"S. Thibert, J. Jourdan, B. Bechevet, J. Faissat, S. Mialon, D. Chaussy, N. Reverdy-Bruas, D. Beneventi","doi":"10.1109/PVSC.2013.6744932","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744932","url":null,"abstract":"The screen printing process applied to the front side metallization of silicon solar cell was studied with a full factorial 324161 design of experiments on an industrial line. Four commercially silver pastes from different suppliers, six apertures, and nine stainless screens were used to analyze the printing results of two hundred and sixteen combinations. The fingers geometrical properties, the line resistivity, and the contact resistivity were inputted in a power loss simulation program to compute the optimal fingers spacing and the theoretical efficiency for each combination. The relative contribution and the effect of all factors and interactions on the solar cell efficiency were calculated to find out general guidelines for process optimization. Finally, a confirmation test was performed on mixed batches of 15.6 × 15.6 cm2, 200 μm thick Cz-Si solar cells to validate assumptions. With an optimized process a maximal 19.2 % efficiency was reached.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73453029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745071
S. Gonzalez, J. Stein, A. Fresquez, M. Ropp, D. Schutz
The high penetration of utility interconnected photovoltaic (PV) inverters can affect the utility at the point of common coupling. Today's utility interconnection standards are evolving to allow voltage and frequency support, and voltage and frequency ride-through capability. With multi-MW-sized PV plants and multitudes of small commercial and residential systems coming online each year, the interconnection standards are allowing distributed energy resource equipment to provide reactive power to supplement existing voltage-regulating devices and ride-through voltage and frequency anomalies. These new interconnection requirements, coupled with the high dc-to-ac ratios, are becoming more common with declining PV module costs and are changing the modes of operation for utility-interconnected PV systems. This report investigates the effects these modes of operation have on the inverter performance, array utilization, and power quality while focusing on conversion efficiency.
{"title":"Performance of utility interconnected photovoltaic inverters operating beyond typical modes of operation","authors":"S. Gonzalez, J. Stein, A. Fresquez, M. Ropp, D. Schutz","doi":"10.1109/PVSC.2013.6745071","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745071","url":null,"abstract":"The high penetration of utility interconnected photovoltaic (PV) inverters can affect the utility at the point of common coupling. Today's utility interconnection standards are evolving to allow voltage and frequency support, and voltage and frequency ride-through capability. With multi-MW-sized PV plants and multitudes of small commercial and residential systems coming online each year, the interconnection standards are allowing distributed energy resource equipment to provide reactive power to supplement existing voltage-regulating devices and ride-through voltage and frequency anomalies. These new interconnection requirements, coupled with the high dc-to-ac ratios, are becoming more common with declining PV module costs and are changing the modes of operation for utility-interconnected PV systems. This report investigates the effects these modes of operation have on the inverter performance, array utilization, and power quality while focusing on conversion efficiency.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74084528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744340
Z. Li, R. Krishnan, G. Tong, R. Kaczynski, U. Schoop, T. Anderson
Rapid thermal annealing studies were conducted on SS/Mo/CIGS/CdS/ITO/Ag devices as a function of anneal time in dry N2 in the temperature range 50 to 200°C, as well as in humidified N2 (85% RH) at 85°C. Interestingly, dry N2 annealing produced an enhancement in cell performance for low thermal budget, predominantly due to increased JSC, and to a lesser extent higher VOC. As examples, CIGS cell efficiency increased by 1.8±0.8% after annealing at 50°C for 300s and 2.0±2.3% when annealed at 100°C for 600s. At higher anneal temperature or longer time the cell performance deteriorated with significant decrease in FF and VOC. The results for the 85% RH at 85°C anneals were similar to the dry anneal studies but with less dramatic changes. Cell performance results after dark annealing indicate light-soaking effects induced by the lamp are not important at these relatively short anneal times. Measurement of quantum efficiency for the annealed samples supports the assumption that the buffer layer/absorber interface degrades at a relatively low temperature and that ITO degradation takes place at higher thermal budgets.
{"title":"The effect of rapid thermal annealing on the performance of CIGS cells with an ITO layer","authors":"Z. Li, R. Krishnan, G. Tong, R. Kaczynski, U. Schoop, T. Anderson","doi":"10.1109/PVSC.2013.6744340","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744340","url":null,"abstract":"Rapid thermal annealing studies were conducted on SS/Mo/CIGS/CdS/ITO/Ag devices as a function of anneal time in dry N2 in the temperature range 50 to 200°C, as well as in humidified N2 (85% RH) at 85°C. Interestingly, dry N2 annealing produced an enhancement in cell performance for low thermal budget, predominantly due to increased JSC, and to a lesser extent higher VOC. As examples, CIGS cell efficiency increased by 1.8±0.8% after annealing at 50°C for 300s and 2.0±2.3% when annealed at 100°C for 600s. At higher anneal temperature or longer time the cell performance deteriorated with significant decrease in FF and VOC. The results for the 85% RH at 85°C anneals were similar to the dry anneal studies but with less dramatic changes. Cell performance results after dark annealing indicate light-soaking effects induced by the lamp are not important at these relatively short anneal times. Measurement of quantum efficiency for the annealed samples supports the assumption that the buffer layer/absorber interface degrades at a relatively low temperature and that ITO degradation takes place at higher thermal budgets.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75230759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744994
B. Walker, Bethlehem G. Negash, Stephen M. Szczepaniak, Kevin Brew, R. Agrawal
To understand and control the growth paths of kesterite based CZTSe films as prepared from kesterite nanoparticles we investigate films prepared from different chalcogenide ratios in the initial nanoparticles. To do so we introduce a new method for producing kesterite nanocrystals with controlled ratios of sulfur and selenium. Final CZTSe devices are prepared from these nanoparticles with total area solar power conversion efficiencies up to and exceeding eight percent (see Fig. 1). All devices made from selenizing nanoparticles that contained sulfur showed efficiency greater than six percent while pure selenide nanoparticles resulted in non-performing devices.
{"title":"CZTSe devices fabricated from CZTSSe nanoparticles","authors":"B. Walker, Bethlehem G. Negash, Stephen M. Szczepaniak, Kevin Brew, R. Agrawal","doi":"10.1109/PVSC.2013.6744994","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744994","url":null,"abstract":"To understand and control the growth paths of kesterite based CZTSe films as prepared from kesterite nanoparticles we investigate films prepared from different chalcogenide ratios in the initial nanoparticles. To do so we introduce a new method for producing kesterite nanocrystals with controlled ratios of sulfur and selenium. Final CZTSe devices are prepared from these nanoparticles with total area solar power conversion efficiencies up to and exceeding eight percent (see Fig. 1). All devices made from selenizing nanoparticles that contained sulfur showed efficiency greater than six percent while pure selenide nanoparticles resulted in non-performing devices.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75781933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744990
S. Schmidt, C. Wolf, N. Papathanasiou, R. Schlatmann, C. Klimm, M. Klaus, C. Genzel, M. Billing, H. Schock
Cu(In, Ga)Se2 solar cell absorbers are prepared on a Mo-coated glass substrate by using a sequential process consisting of a sputter deposition of an In/CuGa/In metal precursor, subsequent PVD deposition of a Se layer and annealing in N2 atmosphere. The Se concentration in the final layer stack was found to be relatively up to 20 % higher than expected. The excess Se is bound in a MoSe2 layer with laterally varying thickness, between the absorber and the Mo back contact. Such a layer can lead to an increase in the series resistance of the completed solar cells. By pumping at a specific time, we were able to reduce the Se partial pressure selectively during the selenization. For a constant annealing time, we find that the MoSe2 thickness increases with the time in which a high Se partial pressure is maintained, i.e., the time before the selective pumping. A significant reduction of the Se partial pressure after half the annealing time led to solar cells with the smallest series resistance and overall best conversion efficiency. We further found that the addition of NaF before the annealing led to comparatively thin MoSe2 layers. This suggests that the Na incorporation from the glass substrate in our process is too small to hinder the MoSe2 growth. A more specific control of the Na supply is required in our process to manipulate the MoSe2 growth and the doping density in the absorber.
{"title":"MoSe2 formation during fabrication of Cu(In, Ga)Se2 solar cell absorbers by using stacked elemental layer precursor and selenization at high temperatures","authors":"S. Schmidt, C. Wolf, N. Papathanasiou, R. Schlatmann, C. Klimm, M. Klaus, C. Genzel, M. Billing, H. Schock","doi":"10.1109/PVSC.2013.6744990","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744990","url":null,"abstract":"Cu(In, Ga)Se2 solar cell absorbers are prepared on a Mo-coated glass substrate by using a sequential process consisting of a sputter deposition of an In/CuGa/In metal precursor, subsequent PVD deposition of a Se layer and annealing in N2 atmosphere. The Se concentration in the final layer stack was found to be relatively up to 20 % higher than expected. The excess Se is bound in a MoSe2 layer with laterally varying thickness, between the absorber and the Mo back contact. Such a layer can lead to an increase in the series resistance of the completed solar cells. By pumping at a specific time, we were able to reduce the Se partial pressure selectively during the selenization. For a constant annealing time, we find that the MoSe2 thickness increases with the time in which a high Se partial pressure is maintained, i.e., the time before the selective pumping. A significant reduction of the Se partial pressure after half the annealing time led to solar cells with the smallest series resistance and overall best conversion efficiency. We further found that the addition of NaF before the annealing led to comparatively thin MoSe2 layers. This suggests that the Na incorporation from the glass substrate in our process is too small to hinder the MoSe2 growth. A more specific control of the Na supply is required in our process to manipulate the MoSe2 growth and the doping density in the absorber.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75787349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744193
A. Reinders, M. Wiesenfarth, R. King
Our paper shows and discusses the results of a design study regarding product applications based on concentrating PV systems. It is generally acknowledged that CPV technology has great potential in medium to large power systems. So far the potential of CPV for products in the built environment has hardly been investigated. To capture probable future CPV products a project was executed in 2012 with 15 teams of design students who were commissioned to develop a conceptual product design with integrated CPV. Though all designs were innovative and surprising, four concepts appeared to be technically feasible: a flexible roof system, a shading bench with e-charger, a concept called Parasol; and an e-mobility charger. It is concluded that from the perspective of industrial design engineering a whole range of innovative CPV products can be developed for use in the built environment.
{"title":"Conceptual product development with integrated concentrating PV systems — CPV in the built environment from a designer's perspective","authors":"A. Reinders, M. Wiesenfarth, R. King","doi":"10.1109/PVSC.2013.6744193","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744193","url":null,"abstract":"Our paper shows and discusses the results of a design study regarding product applications based on concentrating PV systems. It is generally acknowledged that CPV technology has great potential in medium to large power systems. So far the potential of CPV for products in the built environment has hardly been investigated. To capture probable future CPV products a project was executed in 2012 with 15 teams of design students who were commissioned to develop a conceptual product design with integrated CPV. Though all designs were innovative and surprising, four concepts appeared to be technically feasible: a flexible roof system, a shading bench with e-charger, a concept called Parasol; and an e-mobility charger. It is concluded that from the perspective of industrial design engineering a whole range of innovative CPV products can be developed for use in the built environment.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75865254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744449
F. Reil, A. Sepanski, S. Raubach, M. Vosen, E. Dietrich
The number of German PV installations reach in early 2013 1.4 million systems. On the basis of recent research which was carried out within a 3 year R&D-project of TÜV Rheinland with Fraunhofer ISE and several industry partners, around 75 cases were found where a PV system caused a fire through arc faults or hot spots. Out of these known incidents, 65 cases caused major damage whereas 10 faults lead to total loss of the system and building [1]. These numbers display that fire incidents caused by e.g. arc faults are a minority, but every case reveals that latent risks exist when defective installation or products are applied. This work focuses on the qualification of different arc noise spectra which displays a variety of characteristics depending on the electrode contacts, contact materials, implied PV solar simulator, PV array or whether the arc was ignited in a short circuit or being in series with a load resistor or even the inverter.
{"title":"Comparison of different DC Arc spectra — Derivation of proposals for the development of an international arc fault detector standard","authors":"F. Reil, A. Sepanski, S. Raubach, M. Vosen, E. Dietrich","doi":"10.1109/PVSC.2013.6744449","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744449","url":null,"abstract":"The number of German PV installations reach in early 2013 1.4 million systems. On the basis of recent research which was carried out within a 3 year R&D-project of TÜV Rheinland with Fraunhofer ISE and several industry partners, around 75 cases were found where a PV system caused a fire through arc faults or hot spots. Out of these known incidents, 65 cases caused major damage whereas 10 faults lead to total loss of the system and building [1]. These numbers display that fire incidents caused by e.g. arc faults are a minority, but every case reveals that latent risks exist when defective installation or products are applied. This work focuses on the qualification of different arc noise spectra which displays a variety of characteristics depending on the electrode contacts, contact materials, implied PV solar simulator, PV array or whether the arc was ignited in a short circuit or being in series with a load resistor or even the inverter.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72760025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745030
D. A. Duarte, M. Massi, Argemiro Soares da Silva Sobrinho
Nowadays much efforts have been done with the aim to increase the global efficiency of the dye-sensitized solar cells so that the doping of the TiO2 structure have been suggested as one of the most interesting solutions. In this paper the effect of the nitrogen incorporation in the TiO2 structure and studies about the effect of the doped films on the general properties of the solar cells are conducted.
{"title":"Fabrication of dye-sensitized solar cells with N-doped TiO2 thin films: Effect of the nitrogen doping on the photoexcitation processes and generation of electron acceptor states","authors":"D. A. Duarte, M. Massi, Argemiro Soares da Silva Sobrinho","doi":"10.1109/PVSC.2013.6745030","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745030","url":null,"abstract":"Nowadays much efforts have been done with the aim to increase the global efficiency of the dye-sensitized solar cells so that the doping of the TiO2 structure have been suggested as one of the most interesting solutions. In this paper the effect of the nitrogen incorporation in the TiO2 structure and studies about the effect of the doped films on the general properties of the solar cells are conducted.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75565522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745066
A. Brooks, J. Fijal, M. T. St. Germaine, Sean Orsburn, James B. Greenberg, V. Lonij, D. DellaGiustina, A. Cronin
We measure the conversion efficiencies of six inverters manufactured by Fronius, SMA, and Xantrex. We measure efficiencies ranging from 87.0% to 91.7%. We find differences between manufacturers' specified efficiency and field performance of -3.8% and -6.0% Inverter efficiencies are also studied as a function of global horizontal irradiance and ambient temperature.
{"title":"Conversion efficiencies of six grid-tied inverters at the Tucson electric power solar test yard","authors":"A. Brooks, J. Fijal, M. T. St. Germaine, Sean Orsburn, James B. Greenberg, V. Lonij, D. DellaGiustina, A. Cronin","doi":"10.1109/PVSC.2013.6745066","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745066","url":null,"abstract":"We measure the conversion efficiencies of six inverters manufactured by Fronius, SMA, and Xantrex. We measure efficiencies ranging from 87.0% to 91.7%. We find differences between manufacturers' specified efficiency and field performance of -3.8% and -6.0% Inverter efficiencies are also studied as a function of global horizontal irradiance and ambient temperature.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72567472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744480
Sean Yang, Kwang-Ming Lin, Wen-Chin Lee, C. Lin, L. Chu
15.1% total area efficiency on a monolithic 1.09m2 CIGSeS modules sets a new record for commercial-size, monolithic thin-film modules. This achievement results from improvements in both module design and thin-film composition, including: absorber improvement, cell redesign, and dead area reduction. Absorber improvement mainly consists of Selenization and Sulfurization (SAS) process optimization, resulting in open-circuit voltage (Voc) increase. Cell redesign mitigates the interconnect loss and maximize its benefit for Fill Factor (FF), while the reduction of the dead area increases module current. Production of modules with efficiency exceeding 15% is repeatable in the TSMC Solar production line located in Taichung, Taiwan.
{"title":"Achievement of 15.1% total area efficiency on 1.09m2 monolithic CIGSeS modules in TSMC Solar production line","authors":"Sean Yang, Kwang-Ming Lin, Wen-Chin Lee, C. Lin, L. Chu","doi":"10.1109/PVSC.2013.6744480","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744480","url":null,"abstract":"15.1% total area efficiency on a monolithic 1.09m2 CIGSeS modules sets a new record for commercial-size, monolithic thin-film modules. This achievement results from improvements in both module design and thin-film composition, including: absorber improvement, cell redesign, and dead area reduction. Absorber improvement mainly consists of Selenization and Sulfurization (SAS) process optimization, resulting in open-circuit voltage (Voc) increase. Cell redesign mitigates the interconnect loss and maximize its benefit for Fill Factor (FF), while the reduction of the dead area increases module current. Production of modules with efficiency exceeding 15% is repeatable in the TSMC Solar production line located in Taichung, Taiwan.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74840134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：