{"title":"Dilute-nitride active regions on GaSb for mid-infrared semiconductor diode lasers","authors":"H. Nair, A. M. Crook, S. R. Bank","doi":"10.1364/CLEO_SI.2012.CTU2J.7","DOIUrl":null,"url":null,"abstract":"We present the first room-temperature photoluminescence from GaSb-based dilute-nitrides, enabled by minimizing the incorporation of non-radiative defects. This material system could provide a pathway for covering the 3-5 μm regime with diode lasers.","PeriodicalId":6442,"journal":{"name":"2012 Conference on Lasers and Electro-Optics (CLEO)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/CLEO_SI.2012.CTU2J.7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present the first room-temperature photoluminescence from GaSb-based dilute-nitrides, enabled by minimizing the incorporation of non-radiative defects. This material system could provide a pathway for covering the 3-5 μm regime with diode lasers.
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