A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS

Abstract

In wireless communications, high demand for superb video and audio quality increases the required transfer data rate. The unlicensed 7GHz bandwidth at V-band in North America has been drawing a lot of attention by companies and research institutions. Research topics done using CMOS fabrication, which appears to be a more appealing process due to its high level of integration, have been demonstrated to be a viable semiconductor for gigabit wireless at 60GHz [1]. According to the Federal Communications Commission (FCC) regulations, the maximum radiation power for 60GHz systems can reach up to 40dBm [2]. However, due to device limitations such as low maximum operating frequencies and low breakdown voltage, very few power amplifier (PA) designs using CMOS processes with high output power have been reported. To date, medium- to high-power amplifiers in this frequency range are normally implemented using III–V semiconductor fabrication processes.