Peculiarities of Radiative Recombination in Gallium Arsenide Doped with Shallow Donors and Acceptors

Abstract

The photoluminescence of epitaxial n-GaAs: (Te + Ge) with an intermediate degree of compensation is studied as a function of excitation level, the parameters of a “moving” band are determined and compared with the theory. Discrepancies found between theory and experiment can be understood if, when considering thermalization processes of non-equilibrium holes, their transitions between tail states, passing by the valence band, are taken into account. [Russian Text Ignored].