{"title":"A 200-MS/s 98-dB SNR track-and-hold in 0.25-um GaN HEMT","authors":"SungWon Chung, Hae-Seung Lee","doi":"10.1109/CICC.2015.7338405","DOIUrl":null,"url":null,"abstract":"In order to overcome the design challenges of GaN HEMT leakage and Schottky diode turn-on, a GaN track-and-hold (T/H) circuit with 20-V pseudo-differential input swing consists of an asymmetric gate device followed by a symmetric gate device. The GaN T/H provides 98-dB SNR at 200 MS/s while drawing 195 mA.","PeriodicalId":6665,"journal":{"name":"2015 IEEE Custom Integrated Circuits Conference (CICC)","volume":"24 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Custom Integrated Circuits Conference (CICC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2015.7338405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In order to overcome the design challenges of GaN HEMT leakage and Schottky diode turn-on, a GaN track-and-hold (T/H) circuit with 20-V pseudo-differential input swing consists of an asymmetric gate device followed by a symmetric gate device. The GaN T/H provides 98-dB SNR at 200 MS/s while drawing 195 mA.
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