Nanostructured material formation for beyond Si devices

Abstract

Beyond Si CMOS technology is the current challenging for next generation transistor. As demand for nano-scaled devices increase, the ability to manipulate the building blocks of electronic is essential. Catalytic-assisted CNTs are integrated into trenches, holes, parallel plates under CH4/H2 gases by microwave plasma chemical vapor deposition or electron cyclotron resonance deposition. The trench and parallel plates are used to fabricate for gate electrodes, while the holes are used to make interconnections. Results indicate the orientation of grown CNTs is dominated by pattern geometry. The field emission results show that the CNTs exhibit robust electronic properties with emission densities of over ImA/cm2 at 3.97 and 6.30 V/um indicating the high electron emission efficiency as the CNT field effect transistor application. The growth models of Fe, Ni and CoSi2 and application for nanoelectronics are purposed.