Chemical Vapour Deposition of CdS Thin Films at Low Temperatures from Cadmium Ethyl Xanthate

Sabeeh Jassim, A. Abbas, M. Al-Shakban, L. Ahmed
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引用次数: 5

Abstract

Thin films of nanometer sized cadmium sulfide were directly prepared by aerosol-assisted chemical vapor deposition (AACVD) method, cadmium ethyl xanthate complex was used as precursor material at 225 C, 250 C and 275 C. The thermal decomposition of complex was characterized by thermal analysis, (thermogravimetric analysis (TGA) and a differential scanning calorimetry (DSC)). The prepared CdS thin films have been characterized by XRD and SEMEDX analysis. TGA curves ensured that the rapid decomposition of [Cd(S2COEt)2] gives a CdS in single step between 150 C and 200 C. XRD patterns confirmed that the CdS particles crystalized as a hexagonal crystallographic phase at low temperatures. The grain size of particles increased with increasing the preparation temperatures from 225 C to 275 C,. The spherical CdS nanoparticals were observed in SEM analysis.
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乙基黄药镉低温化学气相沉积CdS薄膜的研究
采用气溶胶辅助化学气相沉积法(AACVD)直接制备纳米级硫化镉薄膜,以镉乙基黄药配合物为前驱体材料,分别在225℃、250℃和275℃下进行热分析、热重分析(TGA)和差示扫描量热法(DSC)表征配合物的热分解过程。用XRD和SEMEDX对制备的CdS薄膜进行了表征。TGA曲线保证了[Cd(S2COEt)2]在150℃~ 200℃之间的快速分解得到Cd, XRD谱图证实Cd颗粒在低温下结晶为六方晶相。从225℃到275℃,随着制备温度的升高,颗粒的粒径逐渐增大。通过扫描电镜观察到球形CdS纳米颗粒。
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