Magnetic, Surface And Elemental Characterization of FECO (50:50, 70:30) 50nm Thin Film Grown By Ultra High Vacuum DC Magnetron Sputtering on Silicon (001) Substrate

Mani Gmk, Dhanalakshmi D
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Abstract

. Fe 50 Co 50 and Fe 70 Co 30 (50nm) thin films prepared onto the Silicon (001) substrate at room temperature using UHV DC Magnetron Sputtering (PVD) system. We prepared FeCofilms and characterized their Magnetic, Topographic, Morphology and Elemental analysis using VSM, AFM, FESEM, and EDAX technique respectively. VSM result confirmed both materials are good magnetic in nature and both their Coercivity nearly 200Oe but Fe 50 Co 50 has higher magnetization when compared to Fe 70 Co 30 film. From AFM results, the average roughness and root mean Square ofFe 50 Co 50 film value are double the times higher than Fe 70 Co 30 film. From FESEM result Morphology of the Fe 50 Co 50 film like a columnar structure and Fe 70 Co 30 as like columnar agglomeration structure. EDAX result revels high number of oxygen content present in Fe 70 Co 30 film than Fe 50 Co 50 film as well as no other impurities present in the film.
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在硅(001)衬底上超高真空直流磁控溅射生长FECO (50:50, 70:30) 50nm薄膜的磁性、表面和元素表征
. 利用特高压直流磁控溅射(PVD)系统在室温下在硅(001)衬底上制备了Fe 50 Co 50和Fe 70 Co 30 (50nm)薄膜。我们制备了feco膜,并分别使用VSM、AFM、FESEM和EDAX技术对其进行了磁性、形貌、形貌和元素分析表征。VSM结果表明,两种材料均具有良好的磁性,矫顽力均接近200Oe,但Fe 50 Co 50比Fe 70 Co 30具有更高的磁化强度。AFM结果表明,Fe - 50co - 50膜的平均粗糙度和均方根值比Fe - 70co - 30膜高2倍。FESEM结果显示,fe50co50薄膜为柱状结构,fe70co30薄膜为柱状团聚结构。EDAX结果表明,fe70co30膜中的氧含量高于fe50co50膜,且膜中不存在其他杂质。
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