Influence of deposition temperature in the fabrication of CdTe thin films using RF magnetron sputtering

M. Aliyu, N. Amin
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Abstract

CdTe-based thin film solar cells have shown strong potentials as viable thin film solar cells for the future, due to several attractive material properties. Its direct bandgap, strong absorption coefficient, ease and multiple deposition methods have favored this material in solar cell research and manufacturing. However, the quality of these thin films, depend on the method and process of fabrication. Among the important issues considered for cheaper and more efficient solar cells is the deposition temperature. In this work, CdTe thin films were deposited on glass using RF magnetron sputtering at various temperatures and their structural, optical and electrical characteristics analyzed using SEM, AFM, XRD, and UV-Vis. Results show that grains sizes are not significantly affected for films deposited at 350oC and below. At 400oC however, the grains show remarkable increase in size, while crystallinity is increased with higher deposition temperature. The energy bandgap show gradual increase with temperature, ranging from 1.43–1.54 eV. Overall, this work show that higher deposition temperature is desirable in the fabrication of good quality CdTe films for solar cell applications.
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沉积温度对射频磁控溅射制备碲化镉薄膜的影响
基于cdte的薄膜太阳能电池在未来表现出了强大的潜力,因为一些有吸引力的材料特性。该材料具有直接带隙、强吸收系数、易于沉积和多种沉积方法等优点,有利于太阳能电池的研究和制造。然而,这些薄膜的质量取决于制造的方法和工艺。考虑到更便宜和更高效的太阳能电池的重要问题之一是沉积温度。本文采用射频磁控溅射技术,在不同温度下在玻璃上沉积了CdTe薄膜,并利用SEM、AFM、XRD和UV-Vis分析了其结构、光学和电学特性。结果表明,在350℃及以下温度下沉积的薄膜对晶粒尺寸没有显著影响。在400℃时,晶粒尺寸明显增大,结晶度随沉积温度的升高而增大。随着温度的升高,能隙逐渐增大,在1.43 ~ 1.54 eV之间。总的来说,这项工作表明,在制造用于太阳能电池的高质量碲化镉薄膜时,需要更高的沉积温度。
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