A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays

Angelo Santos, B. Tiwari, J. Martins, Ana Santa, Kamal Chapagai, P. Bahubalindruni, P. Barquinha
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引用次数: 3

Abstract

This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of Vdd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area.
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一个低功耗轨对轨行/列选择器工作在2V使用A - igzo tft柔性显示器
本文提出了一种用低压非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFTs)设计和实现的用于柔性显示器像素矩阵行/列选择的8位移位寄存器。该电路通过采用基于电容自举负载开发的新型NAND门,能够确保完全的轨对轨运行。作为第一步,使用这些逻辑门设计了一个正边触发d触发器(D-FF),然后使用Cadence Virtuoso中的内部低压IGZO TFT模型设计和模拟了一个完整的8位移位寄存器。在这些电路仿真中,电源电压为2V,通道长度为2 μm。8位移位寄存器的仿真结果表明,在20 kHz工作频率下,其功耗为72.15 μW,输出电压摆幅为Vdd的95%,远远超出了氧化物TFT技术在极低电源电压下的技术水平。所提出的电路可以作为行/列选择器在柔性显示器,可以工作在低电源电压和允许小的有源面积。
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