Pub Date : 2018-12-19DOI: 10.1109/IFETC.2018.8584008
A. Shafiee, E. Ghadiri, M. Salleh, M. Yahaya
Printing has enabled researchers to pattern exact amount of materials on the proper location of different substrates and has been used extensively in electronics. Nevertheless, before, during, and after printing activities are crucial to accomplish final printed products with high-quality. This paper reports optimization of inkjet printing an organic solar cell. Pre- and post-printing activities such as heating the substrate during printing and annealing the film after the printing process were studied. Finally, quantum dots as semiconductor nanoparticles were used to enhance the photovoltaic efficiency of inkjet-printed solar cells. Based on our results any heat treatment during and after the printing process increased the surface roughness of the films and attenuated the device performance. Nevertheless, quantum dots/organic solar cells showed higher Jsc than that of organic solar cells.
{"title":"Inkjet Printed Hybrid Organic-Quantum Dots Solar Cells: Effects of Pre- And Post-Printing Activities","authors":"A. Shafiee, E. Ghadiri, M. Salleh, M. Yahaya","doi":"10.1109/IFETC.2018.8584008","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584008","url":null,"abstract":"Printing has enabled researchers to pattern exact amount of materials on the proper location of different substrates and has been used extensively in electronics. Nevertheless, before, during, and after printing activities are crucial to accomplish final printed products with high-quality. This paper reports optimization of inkjet printing an organic solar cell. Pre- and post-printing activities such as heating the substrate during printing and annealing the film after the printing process were studied. Finally, quantum dots as semiconductor nanoparticles were used to enhance the photovoltaic efficiency of inkjet-printed solar cells. Based on our results any heat treatment during and after the printing process increased the surface roughness of the films and attenuated the device performance. Nevertheless, quantum dots/organic solar cells showed higher Jsc than that of organic solar cells.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"10 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81539785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583933
Angelo Santos, B. Tiwari, J. Martins, Ana Santa, Kamal Chapagai, P. Bahubalindruni, P. Barquinha
This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of Vdd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area.
{"title":"A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays","authors":"Angelo Santos, B. Tiwari, J. Martins, Ana Santa, Kamal Chapagai, P. Bahubalindruni, P. Barquinha","doi":"10.1109/IFETC.2018.8583933","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583933","url":null,"abstract":"This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of Vdd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"97 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74066064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8584028
A. Nathan, Chen Jiang, Xiang Cheng, Guangyu Yao, Hanbin Ma, H. Choi
Oxide semiconductors are becoming a key material for future electronics because of their wide band gap, hence high transparency and low OFF current, compared with the ubiquitous silicon technologies. Besides oxides, for flexible electronics applications, organic semiconductors are gaining considerable interest due to their low-cost printing processes and mechanical flexibility. This talk will review the integration of oxides and fully printable organics for large area, including newly emerging application areas related to the Internet of Things. We will discuss the critical design considerations to show how device-circuit interactions should be handled and how compensation methods can be implemented for stable and reliable operation. In particular, the quest for low power becomes highly compelling in wearable devices. We will discuss thin-film transistor operation in the different regimes, and review device properties when operated in the deep subthreshold regime or in near-OFF state, addressing the pivotal requirement of low supply voltage and ultralow power leading to potentially battery-less operation.In order to minimize power consumption in oxide TFTs, the devices are operated in the deep subthreshold regime, i.e., near the OFF state, to reduce drain current that contribute to power consumption [1]. For organic TFTs, in particular, all-inkjet-printed devices, we will show that the operating voltage can also be lowered by reducing the semiconductor/dielectric interface trap density, and thus, power consumption can be further reduced [2]. The all-inkjet-printed devices exhibit a low operating voltage of 1 V, a nearly zero threshold voltage (Vth) of 0.01 V, a steep subthreshold slope of 0.069 V/decade, a high on/off ratio of 107, and negligible hysteresis. By investigating the polarity of the two dielectrics, we found that a Lewis-acid monopolar dielectric could exhibit lipophilicity and hydrophobicity at the same time, which ensures printability and avoids water molecule trapping, respectively. Therefore, the all-inkjet-printed organic TFTs with monopolar dielectric demonstrate much better electrically bias-stress stability than the devices with bipolar dielectric [3]. We will also address the noise that is associated with the operation of the subthreshold TFTs. In addition, we will discuss our recent work on low-power organic TFTs on fibers (i.e., cylinder-shape substrates) with various architectures. In particular, we will show a strain-compensated design for a stretchable fiber TFT, where the device can sustain up to 50% of stretching strain without degradation of performance. This strain-compensated stretchable fiber TFT is a promising device architecture for e-textiles and smart wearables [4].
{"title":"Transparent and Flexible Oxide Nano-Electronics","authors":"A. Nathan, Chen Jiang, Xiang Cheng, Guangyu Yao, Hanbin Ma, H. Choi","doi":"10.1109/IFETC.2018.8584028","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584028","url":null,"abstract":"Oxide semiconductors are becoming a key material for future electronics because of their wide band gap, hence high transparency and low OFF current, compared with the ubiquitous silicon technologies. Besides oxides, for flexible electronics applications, organic semiconductors are gaining considerable interest due to their low-cost printing processes and mechanical flexibility. This talk will review the integration of oxides and fully printable organics for large area, including newly emerging application areas related to the Internet of Things. We will discuss the critical design considerations to show how device-circuit interactions should be handled and how compensation methods can be implemented for stable and reliable operation. In particular, the quest for low power becomes highly compelling in wearable devices. We will discuss thin-film transistor operation in the different regimes, and review device properties when operated in the deep subthreshold regime or in near-OFF state, addressing the pivotal requirement of low supply voltage and ultralow power leading to potentially battery-less operation.In order to minimize power consumption in oxide TFTs, the devices are operated in the deep subthreshold regime, i.e., near the OFF state, to reduce drain current that contribute to power consumption [1]. For organic TFTs, in particular, all-inkjet-printed devices, we will show that the operating voltage can also be lowered by reducing the semiconductor/dielectric interface trap density, and thus, power consumption can be further reduced [2]. The all-inkjet-printed devices exhibit a low operating voltage of 1 V, a nearly zero threshold voltage (Vth) of 0.01 V, a steep subthreshold slope of 0.069 V/decade, a high on/off ratio of 107, and negligible hysteresis. By investigating the polarity of the two dielectrics, we found that a Lewis-acid monopolar dielectric could exhibit lipophilicity and hydrophobicity at the same time, which ensures printability and avoids water molecule trapping, respectively. Therefore, the all-inkjet-printed organic TFTs with monopolar dielectric demonstrate much better electrically bias-stress stability than the devices with bipolar dielectric [3]. We will also address the noise that is associated with the operation of the subthreshold TFTs. In addition, we will discuss our recent work on low-power organic TFTs on fibers (i.e., cylinder-shape substrates) with various architectures. In particular, we will show a strain-compensated design for a stretchable fiber TFT, where the device can sustain up to 50% of stretching strain without degradation of performance. This strain-compensated stretchable fiber TFT is a promising device architecture for e-textiles and smart wearables [4].","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"42 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79344769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/ifetc.2018.8584018
Jie Zhang
Printed and flexible electronics is an emerging clean-tech electronics technology enabled by the solution processable functional materials and optimized high-throughput printing process. Comparing to wafer fab based traditional microelectronics manufacturing, graphic arts printing technology promises low infrastructure cost, high throughput, roll-to-roll/sheet-fed and large area enabled manufacturing. The solution processable functional inks allow the use of printing technology to fabricate functional films, large area electronics components and integrated circuits. These developments have led to variety of low cost electronics components, sensors, large area display and lighting, flexible photovoltaic, and intelligent packaging applications.
{"title":"Printed and Flexible Electronics for Wearables","authors":"Jie Zhang","doi":"10.1109/ifetc.2018.8584018","DOIUrl":"https://doi.org/10.1109/ifetc.2018.8584018","url":null,"abstract":"Printed and flexible electronics is an emerging clean-tech electronics technology enabled by the solution processable functional materials and optimized high-throughput printing process. Comparing to wafer fab based traditional microelectronics manufacturing, graphic arts printing technology promises low infrastructure cost, high throughput, roll-to-roll/sheet-fed and large area enabled manufacturing. The solution processable functional inks allow the use of printing technology to fabricate functional films, large area electronics components and integrated circuits. These developments have led to variety of low cost electronics components, sensors, large area display and lighting, flexible photovoltaic, and intelligent packaging applications.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"5 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81080515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583967
M. Kujala, T. Kololuoma, J. Keskinen, D. Lupo, M. Mäntysalo, T. Kraft
This case study evaluates a highly flexible screen printed through-hole-via using silver microparticle inks for applications in energy harvesting and storage modules. The printed vias fabrication and reliability are evaluated by means of a double sided screen-printing method and repetitive (cyclic) bending tests. Vias, in 125 μm thick PET, were laser cut (50, 100, 150, and 200 μm nominal diameter) then filled, and simultaneously connected to adjacent vias, by screen printing. To investigate the use of the printed via in a monolithic energy module, the vias were used for the fabrication of a flexible printed supercapacitor (aqueous electrolyte and carbon electrode).The results indicate that the lower viscosity silver ink (DuPont 5064H) does not fill the via as effectively as the higher viscosity ink (Asahi LS411AW), and only the sidewall of the vias are coated as the via size increases (≥ 150 μm diameter). Conversely, the Asahi silver paste fills the via more thoroughly and exhibited a 100 % yield (1010 vias; 100 μm nominal via diameter) with the 2-step direct screen-printing method. The bending test showed no signs of via specific breakdown after 30 000 cycles. The results indicate that this via filling process is likely compatible with roll-to-roll screen printing to enable multi-layered printed electronics devices.
{"title":"Screen Printed Vias for a Flexible Energy Harvesting and Storage Module","authors":"M. Kujala, T. Kololuoma, J. Keskinen, D. Lupo, M. Mäntysalo, T. Kraft","doi":"10.1109/IFETC.2018.8583967","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583967","url":null,"abstract":"This case study evaluates a highly flexible screen printed through-hole-via using silver microparticle inks for applications in energy harvesting and storage modules. The printed vias fabrication and reliability are evaluated by means of a double sided screen-printing method and repetitive (cyclic) bending tests. Vias, in 125 μm thick PET, were laser cut (50, 100, 150, and 200 μm nominal diameter) then filled, and simultaneously connected to adjacent vias, by screen printing. To investigate the use of the printed via in a monolithic energy module, the vias were used for the fabrication of a flexible printed supercapacitor (aqueous electrolyte and carbon electrode).The results indicate that the lower viscosity silver ink (DuPont 5064H) does not fill the via as effectively as the higher viscosity ink (Asahi LS411AW), and only the sidewall of the vias are coated as the via size increases (≥ 150 μm diameter). Conversely, the Asahi silver paste fills the via more thoroughly and exhibited a 100 % yield (1010 vias; 100 μm nominal via diameter) with the 2-step direct screen-printing method. The bending test showed no signs of via specific breakdown after 30 000 cycles. The results indicate that this via filling process is likely compatible with roll-to-roll screen printing to enable multi-layered printed electronics devices.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"5 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73311193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583903
A. Shafiee, E. Ghadiri, M. Salleh, M. Yahaya, A. Atala
Neural damage caused by reactive oxygen species (ROS) can trigger several acute or chronic conditions such as Alzheimer’s, Huntington’s, and Parkinson’s diseases. However, ROS scavengers hold great promise for enabling DNA repair in neurons; damaged cells grown on surfaces coated with ROS-scavenging agents may be able to recover their functionality and resilience. Nevertheless, the properties of such surfaces, as well as the scavenger deposition technique, may influence the ability of cells to properly adhere. Moreover, in bioelectronics for neural applications, thin films with adequate properties are crucial for the proper performance of an electronic device. Therefore, precise and reliable deposition techniques that can control the characteristics of thin films are imperative when fabricating bioelectronic devices integrated with cellular systems. To that end, inkjet printing is a promising method with unique advantages such as computer-assisted protocols and efficient consumption of materials. We report the printing of a functional electronic material that exhibits ROS scavenging behavior (Manganese [III] 5, 10, 15, 20-tetra [4-pyridyl]-21H, 23H-porphine chloride tetrakis [methochloride]) using a modified inkjet printer. Different printed pattern schemes that were designed based on the amount of overlap among sequential droplets were used to tune the surface morphology of the inkjet-printed thin films with a wide range of roughness (8.84 to 41.20 nm). Furthermore, post-printing processes (such as plasma treatment) reduced the contact angle of the surface to 20° to increase the adhesion of the damaged cells to the ROS scavenger thin film and enhanced their repair. Such inkjet printing methods of functional electronics materials that can simultaneously be used as ROS scavengers enhance the role of bioelectronics applications in neural studies.
{"title":"Inkjet Printing Of A Reactive Oxygen Species Scavenger For Flexible Bioelectronics Applications In Neural Resilience","authors":"A. Shafiee, E. Ghadiri, M. Salleh, M. Yahaya, A. Atala","doi":"10.1109/IFETC.2018.8583903","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583903","url":null,"abstract":"Neural damage caused by reactive oxygen species (ROS) can trigger several acute or chronic conditions such as Alzheimer’s, Huntington’s, and Parkinson’s diseases. However, ROS scavengers hold great promise for enabling DNA repair in neurons; damaged cells grown on surfaces coated with ROS-scavenging agents may be able to recover their functionality and resilience. Nevertheless, the properties of such surfaces, as well as the scavenger deposition technique, may influence the ability of cells to properly adhere. Moreover, in bioelectronics for neural applications, thin films with adequate properties are crucial for the proper performance of an electronic device. Therefore, precise and reliable deposition techniques that can control the characteristics of thin films are imperative when fabricating bioelectronic devices integrated with cellular systems. To that end, inkjet printing is a promising method with unique advantages such as computer-assisted protocols and efficient consumption of materials. We report the printing of a functional electronic material that exhibits ROS scavenging behavior (Manganese [III] 5, 10, 15, 20-tetra [4-pyridyl]-21H, 23H-porphine chloride tetrakis [methochloride]) using a modified inkjet printer. Different printed pattern schemes that were designed based on the amount of overlap among sequential droplets were used to tune the surface morphology of the inkjet-printed thin films with a wide range of roughness (8.84 to 41.20 nm). Furthermore, post-printing processes (such as plasma treatment) reduced the contact angle of the surface to 20° to increase the adhesion of the damaged cells to the ROS scavenger thin film and enhanced their repair. Such inkjet printing methods of functional electronics materials that can simultaneously be used as ROS scavengers enhance the role of bioelectronics applications in neural studies.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"7 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85307860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583993
Kilwon Cho
Graphene is considered as an excellent electrode material with a high transparency, good conductivity, and superior mechanical flexibility for use in next-generation flexible electronic devices, and at the same time as an attractive epitaxial template material for highly ordered organic crystal growth. The growth mode, morphology and the crystallographic structure of the organic semiconductors near the graphene-organic interface are strongly affected by various physicochemical characteristics of graphene, and they critically influence the performance of graphene-based organic electronic devices. In this talk I will discuss the challenges, opportunities, and our recent progresses in flexible organic electronics based on graphene electrodes. First, I will describe the growth behaviour of organic semiconductors on graphene electrodes, and their effects on the performances of organic transistors and photovoltaic cells. Then, I will introduce a new concept of using organic nanopatches to modify a CVD-grown graphene, which improved fracture strength without degrading any other supreme characteristics of graphene. With this mechanically strengthened graphene, robust and soft organic electronic devices were demonstrated.
{"title":"Soft Organic Electronics Based on Graphene Electrodes","authors":"Kilwon Cho","doi":"10.1109/IFETC.2018.8583993","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583993","url":null,"abstract":"Graphene is considered as an excellent electrode material with a high transparency, good conductivity, and superior mechanical flexibility for use in next-generation flexible electronic devices, and at the same time as an attractive epitaxial template material for highly ordered organic crystal growth. The growth mode, morphology and the crystallographic structure of the organic semiconductors near the graphene-organic interface are strongly affected by various physicochemical characteristics of graphene, and they critically influence the performance of graphene-based organic electronic devices. In this talk I will discuss the challenges, opportunities, and our recent progresses in flexible organic electronics based on graphene electrodes. First, I will describe the growth behaviour of organic semiconductors on graphene electrodes, and their effects on the performances of organic transistors and photovoltaic cells. Then, I will introduce a new concept of using organic nanopatches to modify a CVD-grown graphene, which improved fracture strength without degrading any other supreme characteristics of graphene. With this mechanically strengthened graphene, robust and soft organic electronic devices were demonstrated.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"28 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90788547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8584023
B. Ong
The interest in printed electronics has exploded over the last decade owing to its potential for creating impactful large-area, lightweight, flexible, and ultra-low-cost electronics. To realize this technology vision, manufacture of semiconductor devices by high-throughput roll-to-roll printing, instead of slow batch-wise photolithographic processes, would be paramount. Printed electronics offers a low-cost and eco-friendlier manufacturing approach to a wide range of semiconductor devices including next-gen displays, ultra-low-cost RFIDs, smart labels/packaging, sensors and images, etc. Foremost among critical enablers to propel this paradigm shift in manufacturing is a performance-fulfilling materials suite and compatible processes for fabricating functionally-capable transistors – the fundamental building blocks of modern microelectronics. This presentation discusses the issues, challenges, and recent advances in critical materials and processes for printed electronics and the outlook for this emerging technology moving forward. It aims to shed light on whether printed electronics is all fantasy and hype or innovation and opportunities of impactful commercial values for our times and beyond.
{"title":"Progress in Materials and Processes for Printed Electronics","authors":"B. Ong","doi":"10.1109/IFETC.2018.8584023","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584023","url":null,"abstract":"The interest in printed electronics has exploded over the last decade owing to its potential for creating impactful large-area, lightweight, flexible, and ultra-low-cost electronics. To realize this technology vision, manufacture of semiconductor devices by high-throughput roll-to-roll printing, instead of slow batch-wise photolithographic processes, would be paramount. Printed electronics offers a low-cost and eco-friendlier manufacturing approach to a wide range of semiconductor devices including next-gen displays, ultra-low-cost RFIDs, smart labels/packaging, sensors and images, etc. Foremost among critical enablers to propel this paradigm shift in manufacturing is a performance-fulfilling materials suite and compatible processes for fabricating functionally-capable transistors – the fundamental building blocks of modern microelectronics. This presentation discusses the issues, challenges, and recent advances in critical materials and processes for printed electronics and the outlook for this emerging technology moving forward. It aims to shed light on whether printed electronics is all fantasy and hype or innovation and opportunities of impactful commercial values for our times and beyond.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"11 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91105600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8584012
Leilai Shao, T. Chu, Y. Tao, Kwang-Ting Cheng
Fully printed organic thin film transistors (OTFTs) are promising for low-cost and light-weight flexible wearable electronics and IoT sensing nodes. To overcome process variations and enable robust designs, Pseudo-CMOS circuit style has been proposed and validated for various digital, analog and power circuits [1]. In this study, we developed a SPICE-compatible compact model for OTFT and validated the model with physical measurements. Based on the compact model, we further explored correlations between the threshold voltage (Vth) and characteristics of Pseudo-CMOS circuits. Specifically, we found that the voltage transfer curve of a Pseudo-CMOS inverter and the frequency of a Pseudo-CMOS-based ring-oscillator have linear correlations with Vth. This property can potentially be used for designing humidity, gas and sweat sensors. This design intuition has been validated with SPICE simulation and design insights are drawn from comparisons between two sensing circuitries.
{"title":"Fully Printed Organic Pseudo-CMOS Circuits for Sensing Applications","authors":"Leilai Shao, T. Chu, Y. Tao, Kwang-Ting Cheng","doi":"10.1109/IFETC.2018.8584012","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584012","url":null,"abstract":"Fully printed organic thin film transistors (OTFTs) are promising for low-cost and light-weight flexible wearable electronics and IoT sensing nodes. To overcome process variations and enable robust designs, Pseudo-CMOS circuit style has been proposed and validated for various digital, analog and power circuits [1]. In this study, we developed a SPICE-compatible compact model for OTFT and validated the model with physical measurements. Based on the compact model, we further explored correlations between the threshold voltage (Vth) and characteristics of Pseudo-CMOS circuits. Specifically, we found that the voltage transfer curve of a Pseudo-CMOS inverter and the frequency of a Pseudo-CMOS-based ring-oscillator have linear correlations with Vth. This property can potentially be used for designing humidity, gas and sweat sensors. This design intuition has been validated with SPICE simulation and design insights are drawn from comparisons between two sensing circuitries.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"16 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84752972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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