A comparative study of dynamic characteristics on 16-nm-gate planar CMOS and bulk FinFETs' differential amplifier

Hui-Wen Cheng, Yiming Li
{"title":"A comparative study of dynamic characteristics on 16-nm-gate planar CMOS and bulk FinFETs' differential amplifier","authors":"Hui-Wen Cheng, Yiming Li","doi":"10.1109/ESCINANO.2010.5701053","DOIUrl":null,"url":null,"abstract":"The performance comparison of differential amplifier between 16-nm planar CMOS and FinFET with different AR are conducted. The results of this study show that the FinFET exhibits excellen DC characteristic than other structures. The differential amplifier with a higher gain was also obtained using FinFET. We are currently studying the effect of device variability on dynamic characteristics of differential amplifier.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESCINANO.2010.5701053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The performance comparison of differential amplifier between 16-nm planar CMOS and FinFET with different AR are conducted. The results of this study show that the FinFET exhibits excellen DC characteristic than other structures. The differential amplifier with a higher gain was also obtained using FinFET. We are currently studying the effect of device variability on dynamic characteristics of differential amplifier.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
16纳米栅极平面CMOS与体finfet差分放大器动态特性的比较研究
比较了16nm平面CMOS和不同AR条件下FinFET差分放大器的性能。研究结果表明,与其他结构相比,FinFET具有优异的直流特性。利用FinFET还获得了具有更高增益的差分放大器。目前,我们正在研究器件可变性对差分放大器动态特性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Experimental and theoretical examination of field enhancement in Au nanoparticles of SERS-active substrate for detecting rhodamine 6G Superparamagnetic core-shell nanoparticles for biomedical applications Synthesis of flower-like silver nanoparticles for SERS application I–V performances of aligned ZnO nanorods/Mg0.3Zn0.7O thin film heterojunction for MESFET applications Fabrication and application of nanofork for measuring single cells adhesion force inside ESEM
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1