Dielectric response of CaCu3Ti4O12 materials

C. Pengfei, Li Hanchen, Song Lixun, X. Juan
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Abstract

The dielectric properties and its variation of CaCu3Ti4O12 (CCTO) materials induced by the process conditions are reviewed in this paper. On the basis of heterogeneous microstructure in ceramics and single crystal, the extrinsic Maxwell-Wagner polarization mechanism of internal barrier layer capacitance (IBLC) model is discussed adequately. According to the especial crystal structure and atomic structure, possible grain semiconducting mechanism is proposed. At the end of the paper, theoretical problems in CCTO material, Maxwell-Wagner polarization and dielectric spectroscopy analysis are analyzed.
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cuu3ti4o12材料的介电响应
本文综述了CCTO材料的介电性能及其在不同工艺条件下的变化。基于陶瓷和单晶的非均相微观结构,充分讨论了内阻挡层电容(IBLC)模型的外在Maxwell-Wagner极化机理。根据其特殊的晶体结构和原子结构,提出了可能的晶粒半导体机理。最后对CCTO材料、麦克斯韦-瓦格纳极化和介电光谱分析中的理论问题进行了分析。
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