Analysis of the topography and the sub-surface damage of Cz- and mc-silicon wafers sawn with diamond wire

R. Buchwald, Sindy Wurzner, K. Frohlich, M. Fuchs, S. Retsch, T. Lehmann, H. J. Moller
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引用次数: 3

Abstract

The goal of this work was to investigate the influence of different sawing coolants concerning topography parameters and fracture strength of diamond wire sawn Cz- and mc-Si wafers. Therefore, silicon bricks were sawn using glycol- and water-based coolants. Fracture strength was determined by four bending bar fracture test setup. Additionally, crack depth analyses on beveled samples depending on the crystal orientation of the investigated grains have been done by means of XRD measurements. We found a strong indication of a crystal orientation dependency of the crack depth. Furthermore, we have made single scratch tests with a novel scratch test technique, which offers the possibility to use test parameters comparable to real sawing conditions. The scratch tests have been done on Cz-Si. We investigated the cracks using OCM and SEM images as well as Raman spectroscopy of cross section preparations through the single scratches.
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金刚石丝锯切Cz硅片和mc硅片的形貌和亚表面损伤分析
研究了不同冷却剂对金刚石线锯Cz和mc-Si晶圆形貌参数和断裂强度的影响。因此,硅砖是用乙二醇和水基冷却剂锯切的。通过四根弯曲杆断裂试验装置测定断裂强度。此外,利用XRD测量方法对斜切样品进行了裂纹深度分析,分析了裂纹深度取决于所研究晶粒的晶体取向。我们发现了一个强烈的迹象表明,晶体取向依赖于裂纹深度。此外,我们用一种新颖的划痕测试技术进行了单划痕测试,这提供了使用与真实锯切条件相当的测试参数的可能性。对Cz-Si进行了划痕试验。我们使用OCM和SEM图像以及通过单个划痕的截面制备的拉曼光谱来研究裂纹。
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