P. Brun, F. Bailly, M. Guillermet, E. Aparico, N. Possémé
{"title":"Plasma etch challenges at 14nm and beyond technology nodes in the BEOL","authors":"P. Brun, F. Bailly, M. Guillermet, E. Aparico, N. Possémé","doi":"10.1109/IITC-MAM.2015.7325604","DOIUrl":null,"url":null,"abstract":"With the constant scaling down in dimension, the metal hard mask strategy, integration of choice for porous SiOCH film integration, presents new issues that cannot not been neglected for the 14nm and beyond. These issues and associated solutions are presented from plasma etch point of view for the 14nm node.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"22 1","pages":"21-24"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325604","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
With the constant scaling down in dimension, the metal hard mask strategy, integration of choice for porous SiOCH film integration, presents new issues that cannot not been neglected for the 14nm and beyond. These issues and associated solutions are presented from plasma etch point of view for the 14nm node.
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