Electrical performance at high temperature and surge current of 1.2 kV power rectifiers: Comparison between Si PiN, 4H-SiC Schottky and JBS diodes

Abstract

A comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers were characterized in the 25degC-300degC range, while the Si-PiN was tested up to 200degC due to the Si temperature limitation. 4H-SiC rectifiers exhibited superior temperature performances and their design can be adapted to a specific application. Surge current tests were also performed on both SiC and Si devices.