A Fiber-Si3N4 Composite Nanoforest with High 7.6 to $11.6\ \mu\mathrm{m}$ Absorption for MEMS Infrared Sensors

Chenchen Zhang, H. Mao, Meng Shi, J. Xiong, Kewen Long, Dapeng Chen
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Abstract

In this work, a fiber-Si3N4 composite nanoforest with high absorption in 7.6 to $11.6\ \mu \mathrm{m}$ wavelength range is presented. Especially, when thickness of a Si3N4 coating reaches 300 nm, the nanoforest can achieve an average absorption as high as 88.12%. Such a composite nanoforest is fabricated based on an extremely simple process, including spin-coating and plasma treating of a polyimide layer, followed by deposition of a Si3N4 film. The process is fully compatible with conventional micromachining, thus the nanoforest can be integrated onto MEMS infrared (IR) sensors as an additional absorber. Furthermore, with such a composite nanoforest-based absorber, the IR sensors are expected to achieve higher performance, especially for human IR sensing.
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用于MEMS红外传感器的高7.6 ~ 11.6\ \mu\数学{m}$吸收的光纤- si3n4复合纳米森林
在这项工作中,提出了一种在7.6 ~ 11.6\ \mu \ mathm {m}$波长范围内具有高吸收的光纤-氮化硅复合纳米森林。特别是当Si3N4涂层厚度达到300 nm时,纳米森林的平均吸收率高达88.12%。这种复合纳米森林是基于一个极其简单的过程制造的,包括自旋涂层和等离子体处理聚酰亚胺层,然后沉积一层氮化硅薄膜。该工艺与传统的微加工完全兼容,因此纳米森林可以集成到MEMS红外(IR)传感器上,作为额外的吸收器。此外,利用这种基于纳米森林的复合吸收剂,红外传感器有望实现更高的性能,特别是用于人体红外传感。
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