Dislocation Etching Morphology on the A Plane of Sapphire Crystal

IF 1.5 4区 材料科学 Q3 CRYSTALLOGRAPHY Crystal Research and Technology Pub Date : 2021-06-12 DOI:10.1002/crat.202100022
F. Cao, Fei Li, Zhiyong Yuan, Lunyong Zhang, Sida Jiang, Hongxian Shen, Z. Ning, Yongjiang Huang, D. Xing, H. Zuo, Jiecai Han, Jianfei Sun
{"title":"Dislocation Etching Morphology on the A Plane of Sapphire Crystal","authors":"F. Cao, Fei Li, Zhiyong Yuan, Lunyong Zhang, Sida Jiang, Hongxian Shen, Z. Ning, Yongjiang Huang, D. Xing, H. Zuo, Jiecai Han, Jianfei Sun","doi":"10.1002/crat.202100022","DOIUrl":null,"url":null,"abstract":"In this work, the dislocation etching pit morphology and etching kinetics on the A‐{11 2¯ 0} plane of sapphire crystal (α‐Al2O3) are studied experimentally. The results show that the etch pit exhibits a subrhombic 3D morphology, which is consistent with the atom arrangement symmetry of the A plane. Further analysis shows that the two adjacent sides of the rhombic etch pits correspond to the directions [3 3¯ 0 1¯ ] and [3 3¯ 02], respectively; both of them are in the atomic close‐packing direction of A plane. The etch pits are controlled by a chemical reaction between Al2O3 and potassium hydroxide (KOH) with the reaction activation energy of 51.7 kJ mol−1, which is developed in a manner of kinematic wave by the step moving with a constant speed.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2021-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Research and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/crat.202100022","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 2

Abstract

In this work, the dislocation etching pit morphology and etching kinetics on the A‐{11 2¯ 0} plane of sapphire crystal (α‐Al2O3) are studied experimentally. The results show that the etch pit exhibits a subrhombic 3D morphology, which is consistent with the atom arrangement symmetry of the A plane. Further analysis shows that the two adjacent sides of the rhombic etch pits correspond to the directions [3 3¯ 0 1¯ ] and [3 3¯ 02], respectively; both of them are in the atomic close‐packing direction of A plane. The etch pits are controlled by a chemical reaction between Al2O3 and potassium hydroxide (KOH) with the reaction activation energy of 51.7 kJ mol−1, which is developed in a manner of kinematic wave by the step moving with a constant speed.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
蓝宝石晶体A面位错蚀刻形貌研究
本文研究了蓝宝石晶体(α‐Al2O3)在A‐{11.2¯0}平面上的位错蚀刻坑形态和蚀刻动力学。结果表明,蚀坑呈现出亚菱形的三维形貌,符合a面原子排列的对称性。进一步分析表明,菱形蚀刻坑的两个相邻边分别对应于[3 3¯0 ~ 1¯]和[3 3¯02]方向;它们都在A平面的原子密排方向。蚀坑是由Al2O3与氢氧化钾(KOH)的化学反应控制的,反应活化能为51.7 kJ mol−1,反应活化能以等速阶跃运动的运动波形式发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
6.70%
发文量
121
审稿时长
1.9 months
期刊介绍: The journal Crystal Research and Technology is a pure online Journal (since 2012). Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of -crystal growth techniques and phenomena (including bulk growth, thin films) -modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals) -industrial crystallisation -application of crystals in materials science, electronics, data storage, and optics -experimental, simulation and theoretical studies of the structural properties of crystals -crystallographic computing
期刊最新文献
Characterization of Elastic Constants of Langatate Single Crystals with 32 Symmetry Using Ultrasonic Pulse‐Echo Technique Adhesion, Stability and Electronic Properties of Ag/SnO2 Interface from First‐Principles Calculation Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill‐Posed Inverse Problems using Images and Numerical Data Masthead: Crystal Research and Technology 12'2021
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1