F. Cao, Fei Li, Zhiyong Yuan, Lunyong Zhang, Sida Jiang, Hongxian Shen, Z. Ning, Yongjiang Huang, D. Xing, H. Zuo, Jiecai Han, Jianfei Sun
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引用次数: 2
Abstract
In this work, the dislocation etching pit morphology and etching kinetics on the A‐{11 2¯ 0} plane of sapphire crystal (α‐Al2O3) are studied experimentally. The results show that the etch pit exhibits a subrhombic 3D morphology, which is consistent with the atom arrangement symmetry of the A plane. Further analysis shows that the two adjacent sides of the rhombic etch pits correspond to the directions [3 3¯ 0 1¯ ] and [3 3¯ 02], respectively; both of them are in the atomic close‐packing direction of A plane. The etch pits are controlled by a chemical reaction between Al2O3 and potassium hydroxide (KOH) with the reaction activation energy of 51.7 kJ mol−1, which is developed in a manner of kinematic wave by the step moving with a constant speed.
期刊介绍:
The journal Crystal Research and Technology is a pure online Journal (since 2012).
Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of
-crystal growth techniques and phenomena (including bulk growth, thin films)
-modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals)
-industrial crystallisation
-application of crystals in materials science, electronics, data storage, and optics
-experimental, simulation and theoretical studies of the structural properties of crystals
-crystallographic computing