This work reports on the determination of the heat conductivity of high temperature stable carbon materials in the temperature range well above 2000 °C where classic material characterization methods fail. Dense graphite (DG) materials as well as rigid and soft felt isolation (RFI/SFI) components have been investigated which are used during crystal growth of SiC by the physical vapor transport method (PVT) in the temperature regime of 2000 and 2400 °C. The applied materials characterization methods include low temperature physical heat conductivity measurements using laser flash analysis (LFA) in the temperature range 25–1200 °C, data extrapolation to elevated temperatures up to 2400 °C, and a correlation of heating processes and computer simulation of the temperature field of different hot zone designs. Using this approach, the calculated temperatures and experimentally determined values with an error of less than ± 2% at 2400 °C can be merged.
{"title":"Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth","authors":"Jonas Ihle, Peter J. Wellmann","doi":"10.1002/crat.202400080","DOIUrl":"https://doi.org/10.1002/crat.202400080","url":null,"abstract":"This work reports on the determination of the heat conductivity of high temperature stable carbon materials in the temperature range well above 2000 °C where classic material characterization methods fail. Dense graphite (DG) materials as well as rigid and soft felt isolation (RFI/SFI) components have been investigated which are used during crystal growth of SiC by the physical vapor transport method (PVT) in the temperature regime of 2000 and 2400 °C. The applied materials characterization methods include low temperature physical heat conductivity measurements using laser flash analysis (LFA) in the temperature range 25–1200 °C, data extrapolation to elevated temperatures up to 2400 °C, and a correlation of heating processes and computer simulation of the temperature field of different hot zone designs. Using this approach, the calculated temperatures and experimentally determined values with an error of less than ± 2% at 2400 °C can be merged.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141947253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sabah. E. Algarni, Atef F. Qasrawi, Najla. M. Khusayfan
In this study, semitransparent lead films serve as substrates for depositing niobium pentoxide thin films, forming versatile electro‐optical devices. Using vacuum evaporation and ion sputtering techniques at ≈10−5 mbar, stacked layers of crystalline Pb and amorphous Nb2O5 are created. This process reduces free carrier absorption in Nb2O5 and forms Urbach tail states with a width of 0.91 eV. Pb/Nb2O5 thin films exhibit remarkable broadband absorption, exceeding 440% in the visible and 98% in the infrared. Moreover, Pb substrates induce a redshift in Nb2O5’s energy bandgap. Electrical analysis using impedance spectroscopy on Pb/Nb2O5/Ag structures reveals their series/parallel resonance and bandstop filter properties. Notably, the bandstop filters exhibit reflection coefficient minima at a notch frequency of 1.66 GHz, with a bandwidth of 280 MHz, return loss of 26 dB, and voltage standing wave ratio of 1.13. These findings underscore the device's potential for wide‐ranging electro‐optical applications across the electromagnetic spectrum.
{"title":"High Broadband Optical Absorption and Bandstop Filter Characteristics of Pb/Nb2O5 Interfaces","authors":"Sabah. E. Algarni, Atef F. Qasrawi, Najla. M. Khusayfan","doi":"10.1002/crat.202400136","DOIUrl":"https://doi.org/10.1002/crat.202400136","url":null,"abstract":"In this study, semitransparent lead films serve as substrates for depositing niobium pentoxide thin films, forming versatile electro‐optical devices. Using vacuum evaporation and ion sputtering techniques at ≈10<jats:sup>−5</jats:sup> mbar, stacked layers of crystalline Pb and amorphous Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub> are created. This process reduces free carrier absorption in Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub> and forms Urbach tail states with a width of 0.91 eV. Pb/Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub> thin films exhibit remarkable broadband absorption, exceeding 440% in the visible and 98% in the infrared. Moreover, Pb substrates induce a redshift in Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>’s energy bandgap. Electrical analysis using impedance spectroscopy on Pb/Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>/Ag structures reveals their series/parallel resonance and bandstop filter properties. Notably, the bandstop filters exhibit reflection coefficient minima at a notch frequency of 1.66 GHz, with a bandwidth of 280 MHz, return loss of 26 dB, and voltage standing wave ratio of 1.13. These findings underscore the device's potential for wide‐ranging electro‐optical applications across the electromagnetic spectrum.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141947251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yana Liu, Fangxia Zhao, Haoyi Chen, Xingfeng Tang, Zhenzhong Zhang, Chengyang Gu, Hong Chang
In order to explore the crystallization behavior of Co‐doped amorphous manganese dioxide(Co‐doped AMO) and to investigate the electrochemical properties of its different crystallization products as cathodes for aqueous zinc ion batteries. In this work, the effects of heat treatment temperature on the microstructure and phase composition of Co‐doped AMO and their electrochemical properties of Zn‐MnO2 battery cathode materials are systematically investigated. The results show that Co‐doping increases the crystallization temperature of pure AMO. When the heat treatment temperature is 400 °C, Co‐doped AMO is amorphous. At 500 and 550 °C, part of the Co‐doped AMO crystallizes into tetragonal spinel structured (Co, Mn)(Co, Mn)2O4 material between MnCo2O4 and Mn3O4. At 650 °C, the crystallized product is completely nano‐α‐Mn(Co)O2 crystal. The maximum discharge specific capacities and the retention rate after 100 cycles of the samples at 100 mA g−1 are 325.40 mAh g−1, 86.88%; 217.00 mAh g−1, 13.94%; 186.68 mAh g−1, 41.01%; and 149.03 mAh g−1, 31.27% for the unheated and 400, 550, 650 °C heat‐treated samples, respectively. It is proved that the Co‐doped AMO without heat treatment is superior to the partially or fully crystallized materials in terms of comprehensive performance and cost as cathode materials for AZIB.
为了探索掺杂 Co 的无定形二氧化锰（Co-doped AMO）的结晶行为，并研究其不同结晶产物作为水性锌离子电池阴极材料的电化学性能。本文系统研究了热处理温度对 Co 掺杂 AMO 的微观结构和相组成的影响，以及它们作为 Zn-MnO2 电池阴极材料的电化学性能。结果表明，Co 掺杂会提高纯 AMO 的结晶温度。当热处理温度为 400 ℃ 时，掺 Co 的 AMO 呈无定形。在 500 和 550 ℃ 时，部分掺 Co 的 AMO 结晶成介于 MnCo2O4 和 Mn3O4 之间的四方尖晶石结构 (Co, Mn)(Co, Mn)2O4 材料。650 °C 时，结晶产物完全是纳米α-Mn(Co)O2 晶体。样品在 100 mA g-1 下循环 100 次后的最大放电比容量和保持率分别为：未加热样品 325.40 mAh g-1，86.88%；热处理样品 217.00 mAh g-1，13.94%；热处理样品 186.68 mAh g-1，41.01%；热处理样品 149.03 mAh g-1，31.27%。事实证明，作为 AZIB 的阴极材料，未经热处理的掺 Co AMO 在综合性能和成本方面均优于部分结晶或完全结晶的材料。
{"title":"Crystallization Behavior of Co‐Doped Amorphous Manganese Dioxide and Its Cathode Performance for Aqueous Zinc Ion Batteries","authors":"Yana Liu, Fangxia Zhao, Haoyi Chen, Xingfeng Tang, Zhenzhong Zhang, Chengyang Gu, Hong Chang","doi":"10.1002/crat.202400029","DOIUrl":"https://doi.org/10.1002/crat.202400029","url":null,"abstract":"In order to explore the crystallization behavior of Co‐doped amorphous manganese dioxide(Co‐doped AMO) and to investigate the electrochemical properties of its different crystallization products as cathodes for aqueous zinc ion batteries. In this work, the effects of heat treatment temperature on the microstructure and phase composition of Co‐doped AMO and their electrochemical properties of Zn‐MnO<jats:sub>2</jats:sub> battery cathode materials are systematically investigated. The results show that Co‐doping increases the crystallization temperature of pure AMO. When the heat treatment temperature is 400 °C, Co‐doped AMO is amorphous. At 500 and 550 °C, part of the Co‐doped AMO crystallizes into tetragonal spinel structured (Co, Mn)(Co, Mn)<jats:sub>2</jats:sub>O<jats:sub>4</jats:sub> material between MnCo<jats:sub>2</jats:sub>O<jats:sub>4</jats:sub> and Mn<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub>. At 650 °C, the crystallized product is completely nano‐α‐Mn(Co)O<jats:sub>2</jats:sub> crystal. The maximum discharge specific capacities and the retention rate after 100 cycles of the samples at 100 mA g<jats:sup>−1</jats:sup> are 325.40 mAh g<jats:sup>−1</jats:sup>, 86.88%; 217.00 mAh g<jats:sup>−1</jats:sup>, 13.94%; 186.68 mAh g<jats:sup>−1</jats:sup>, 41.01%; and 149.03 mAh g<jats:sup>−1</jats:sup>, 31.27% for the unheated and 400, 550, 650 °C heat‐treated samples, respectively. It is proved that the Co‐doped AMO without heat treatment is superior to the partially or fully crystallized materials in terms of comprehensive performance and cost as cathode materials for AZIB.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141947256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2D hexagonal boron nitride (h‐BN), which has a similar honeycomb lattice structure to graphene, is a promising dielectric material for a wide variety of applications. Herein, the growth of high‐quality and large‐size multilayer h‐BN crystals on Cu foils is reported by chemical vapor deposition (CVD) at atmospheric pressure. The size of an individual isolated hexagonal crystal of h‐BN is about 20 µm, and the thickness is 3 nm. This paper studies the variables that affect h‐BN growth during the process and the microstructure changes during the growth. Through analysis of the thermal and dynamic processes of chemical vapor deposition, relationships are derived between the mass of h‐BN grown in the gas phase and various temperature and pressure factors. This information is used to develop appropriate parameters for commercial copper foil growth. Finally, using optimized conditions, high‐quality h‐BN at high pressure and low gas flow conditions are grown.
{"title":"The Growth Mechanism of Layered Hexagonal Boron Nitride Crystal on Copper Foil","authors":"Xia Lei, Guangcun Gao, Jieqiong Wang","doi":"10.1002/crat.202400013","DOIUrl":"https://doi.org/10.1002/crat.202400013","url":null,"abstract":"2D hexagonal boron nitride (h‐BN), which has a similar honeycomb lattice structure to graphene, is a promising dielectric material for a wide variety of applications. Herein, the growth of high‐quality and large‐size multilayer h‐BN crystals on Cu foils is reported by chemical vapor deposition (CVD) at atmospheric pressure. The size of an individual isolated hexagonal crystal of h‐BN is about 20 µm, and the thickness is 3 nm. This paper studies the variables that affect h‐BN growth during the process and the microstructure changes during the growth. Through analysis of the thermal and dynamic processes of chemical vapor deposition, relationships are derived between the mass of h‐BN grown in the gas phase and various temperature and pressure factors. This information is used to develop appropriate parameters for commercial copper foil growth. Finally, using optimized conditions, high‐quality h‐BN at high pressure and low gas flow conditions are grown.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Deepa Muniraj, Raju Suresh Kumar, Abdulrahman I. Almansour, Ikhyun Kim, S. A. Martin Britto Dhas
Glycinium oxalate (GO) and Bis(glycinium) oxalate (BGO) crystals are successfully grown using the slow evaporation solution growth technique. Following their growth, the crystals are subjected to a series of acoustic shock pulses. The effects of these shock pulses on the structural, optical, dielectric, and morphological properties of the crystals are comprehensively analyzed using various characterization techniques, including powder X‐ray diffraction (XRD), UV‐Visible spectroscopy, dielectric spectroscopy, and optical microscopy. Structural analysis through XRD reveals shifts in diffraction peak positions, indicating structural deformations. Fourier transform infrared spectroscopy analysis assesses the chemical stability of GO and BGO under shocked conditions. UV‐Visible spectroscopy shows alterations in optical transmission with successive shock pulses, attributed to structural and surface defects. Dielectric properties are investigated over a frequency range from 1 Hz to 1 MHz, revealing variations in dielectric constant and loss tangent, which provide insights into the electrical behavior of the materials under normal and shocked conditions. Optical and scanning electron microscopy examine surface morphology, visualizing defects induced by the shock pulses. This study highlights the significant impact of shock pulses on the structural properties, optical transmission, dielectric properties, and surface morphology of GO and BGO crystals, offering valuable information on their resilience under dynamic conditions and potential applications.
利用缓慢蒸发溶液生长技术成功生长出草酸甘氨酸（GO）和草酸双甘氨酸（BGO）晶体。晶体生长后，对其进行了一系列声学冲击脉冲。利用各种表征技术，包括粉末 X 射线衍射 (XRD)、紫外-可见光谱、介电光谱和光学显微镜，全面分析了这些冲击脉冲对晶体的结构、光学、介电和形态特性的影响。通过 X 射线衍射进行的结构分析表明，衍射峰位置发生了移动，这表明发生了结构变形。傅立叶变换红外光谱分析评估了 GO 和 BGO 在冲击条件下的化学稳定性。紫外-可见光谱分析显示，在连续的冲击脉冲下，光学透射率会发生变化，这归因于结构和表面缺陷。介电性能的研究频率范围为 1 Hz 至 1 MHz，揭示了介电常数和损耗正切的变化，有助于深入了解材料在正常和冲击条件下的电学行为。光学显微镜和扫描电子显微镜检查表面形态，观察冲击脉冲引起的缺陷。这项研究强调了冲击脉冲对 GO 和 BGO 晶体的结构特性、光学传输、介电特性和表面形态的重大影响，为它们在动态条件下的恢复能力和潜在应用提供了宝贵的信息。
{"title":"Acoustic Shock‐Induced Low Dielectric Loss in Glycine and Oxalic Acid‐Based Single Crystals","authors":"Deepa Muniraj, Raju Suresh Kumar, Abdulrahman I. Almansour, Ikhyun Kim, S. A. Martin Britto Dhas","doi":"10.1002/crat.202400090","DOIUrl":"https://doi.org/10.1002/crat.202400090","url":null,"abstract":"Glycinium oxalate (GO) and Bis(glycinium) oxalate (BGO) crystals are successfully grown using the slow evaporation solution growth technique. Following their growth, the crystals are subjected to a series of acoustic shock pulses. The effects of these shock pulses on the structural, optical, dielectric, and morphological properties of the crystals are comprehensively analyzed using various characterization techniques, including powder X‐ray diffraction (XRD), UV‐Visible spectroscopy, dielectric spectroscopy, and optical microscopy. Structural analysis through XRD reveals shifts in diffraction peak positions, indicating structural deformations. Fourier transform infrared spectroscopy analysis assesses the chemical stability of GO and BGO under shocked conditions. UV‐Visible spectroscopy shows alterations in optical transmission with successive shock pulses, attributed to structural and surface defects. Dielectric properties are investigated over a frequency range from 1 Hz to 1 MHz, revealing variations in dielectric constant and loss tangent, which provide insights into the electrical behavior of the materials under normal and shocked conditions. Optical and scanning electron microscopy examine surface morphology, visualizing defects induced by the shock pulses. This study highlights the significant impact of shock pulses on the structural properties, optical transmission, dielectric properties, and surface morphology of GO and BGO crystals, offering valuable information on their resilience under dynamic conditions and potential applications.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141744507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tetrahedral oxygenated groups with large highest occupied molecular orbital‐lowest unoccupied molecular orbital (H gaps such as [SO4] are beneficial for deep ultraviolet (DUV) transmission but usually make against generating sufficient birefringence due to the small polarizability anisotropy. Thus, it is extremely difficult to obtain DUV transmission and large birefringence simultaneously in the search for DUV birefringent materials in sulfates. Herein, two new ammonium‐rare earth metal sulfates, NH4Y(SO4)2·H2O and NH4YSO4F2, with DUV transmission are presented. Meanwhile, both exhibit greatly elevated birefringence through the involvement of NH4+ units, compared to Y2(SO4)3·8H2O. Their optical properties are further investigated by theoretical calculations, and the effect of the introduction of NH4+ into yttrium sulfate on optimizing the structures and properties is discussed. This work may provide a new perspective for further exploration of DUV birefringent materials in tetrahedral oxygenated group sulfates.
{"title":"NH4Y(SO4)2·H2O and NH4YSO4F2: Two New Ammonium‐Rare Earth Metal Sulfates with Enhanced Optical Anisotropy and Deep Ultraviolet Transmission","authors":"Luyong Zhang, Shibin Wang, Zhencheng Wu, Xueling Hou, Zhihua Yang, Fangfang Zhang, Shilie Pan","doi":"10.1002/crat.202400072","DOIUrl":"https://doi.org/10.1002/crat.202400072","url":null,"abstract":"Tetrahedral oxygenated groups with large highest occupied molecular orbital‐lowest unoccupied molecular orbital (H gaps such as [SO<jats:sub>4</jats:sub>] are beneficial for deep ultraviolet (DUV) transmission but usually make against generating sufficient birefringence due to the small polarizability anisotropy. Thus, it is extremely difficult to obtain DUV transmission and large birefringence simultaneously in the search for DUV birefringent materials in sulfates. Herein, two new ammonium‐rare earth metal sulfates, NH<jats:sub>4</jats:sub>Y(SO<jats:sub>4</jats:sub>)<jats:sub>2</jats:sub>·H<jats:sub>2</jats:sub>O and NH<jats:sub>4</jats:sub>YSO<jats:sub>4</jats:sub>F<jats:sub>2</jats:sub>, with DUV transmission are presented. Meanwhile, both exhibit greatly elevated birefringence through the involvement of NH<jats:sub>4</jats:sub><jats:sup>+</jats:sup> units, compared to Y<jats:sub>2</jats:sub>(SO<jats:sub>4</jats:sub>)<jats:sub>3</jats:sub>·8H<jats:sub>2</jats:sub>O. Their optical properties are further investigated by theoretical calculations, and the effect of the introduction of NH<jats:sub>4</jats:sub><jats:sup>+</jats:sup> into yttrium sulfate on optimizing the structures and properties is discussed. This work may provide a new perspective for further exploration of DUV birefringent materials in tetrahedral oxygenated group sulfates.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141744510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Dropka, M. Holeňa, Cornelia Thieme, Ta-Shun Chou
Development of the Vertical Growth Freeze crystal growth process is a typical example of solving the ill‐posed inverse problem, which violates one or more of Hadamard's well‐posedness criteria of solution existence, uniqueness, and stability. In this study, different data‐driven approaches are used to solve inverse problems: Reduced Order Modelling method of Proper Orthogonal Decomposition with Inverse Distance weighting (ROM POD InvD), an approximation method of Kriging and Artificial Neural Networks (ANN) employing images, combination of images and numerical data and solely numerical data, respectively. The ≈200 training data are generated by Computational Fluid Dynamics (CFD) simulations of the forward problem. Numerical input data are related to the temperatures and coordinates in 10 characteristic monitoring points in the melt and crystal, while the image input data are related to the interface shape and position. Using the random mean squared error as a criterion, the Kriging method based on images and numerical data and the ANN method based on numerical data are able to capture the system behavior more accurately, in contrast to the ROM POD InvD method, which is based solely on images.
冻结晶体垂直生长过程的发展是解决病态逆问题的一个典型例子，它违反了Hadamard解的存在性、唯一性和稳定性的一个或多个适定准则。在本研究中，采用了不同的数据驱动方法来解决反问题:基于逆距离加权的适当正交分解的降阶建模方法(ROM POD InvD)， Kriging和人工神经网络(ANN)的近似方法，分别采用图像，图像和数值数据的组合以及单独的数值数据。约200个训练数据由计算流体动力学(CFD)模拟正演问题生成。数值输入数据与熔体和晶体中10个特征监测点的温度和坐标有关，图像输入数据与界面形状和位置有关。与仅基于图像的ROM POD InvD方法相比，以随机均方误差为标准，基于图像和数值数据的Kriging方法和基于数值数据的ANN方法能够更准确地捕捉系统行为。
{"title":"Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill‐Posed Inverse Problems using Images and Numerical Data","authors":"N. Dropka, M. Holeňa, Cornelia Thieme, Ta-Shun Chou","doi":"10.1002/crat.202300125","DOIUrl":"https://doi.org/10.1002/crat.202300125","url":null,"abstract":"Development of the Vertical Growth Freeze crystal growth process is a typical example of solving the ill‐posed inverse problem, which violates one or more of Hadamard's well‐posedness criteria of solution existence, uniqueness, and stability. In this study, different data‐driven approaches are used to solve inverse problems: Reduced Order Modelling method of Proper Orthogonal Decomposition with Inverse Distance weighting (ROM POD InvD), an approximation method of Kriging and Artificial Neural Networks (ANN) employing images, combination of images and numerical data and solely numerical data, respectively. The ≈200 training data are generated by Computational Fluid Dynamics (CFD) simulations of the forward problem. Numerical input data are related to the temperatures and coordinates in 10 characteristic monitoring points in the melt and crystal, while the image input data are related to the interface shape and position. Using the random mean squared error as a criterion, the Kriging method based on images and numerical data and the ANN method based on numerical data are able to capture the system behavior more accurately, in contrast to the ROM POD InvD method, which is based solely on images.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2023-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84068718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Masthead: Crystal Research and Technology 12'2021","authors":"","doi":"10.1002/crat.202170033","DOIUrl":"https://doi.org/10.1002/crat.202170033","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73006646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"(Crystal Research and Technology 12/2021)","authors":"","doi":"10.1002/crat.202170032","DOIUrl":"https://doi.org/10.1002/crat.202170032","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84977378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Masthead: Crystal Research and Technology 11'2021","authors":"","doi":"10.1002/crat.202170031","DOIUrl":"https://doi.org/10.1002/crat.202170031","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77043996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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