Effects of Helium on the creep resistance of Er2O3 films

Abstract

The nanostructured Er₂O₃ thin films implanted by Helium (He) were prepared by magnetron sputtering under different He partial pressure. The creep properties of the Er₂O₃ films under different temperatures ranging from ambient temperature to 450 °C were investigated systematically by nanoindentation measurements. The morphology and microstructure of the films were determined by a scanning electron microscope (SEM) and an X-ray diffractometer (XRD), respectively. The effects of He on the creep properties of the Er₂O₃ film were discussed by using a slope ($d\dot{\epsilon }/d\sigma$) of the creep rate stress curve at the steady-state creep stage. The results show that the crystallinity of the films became weak with the He partial pressure. Furthermore, the implanting He has a strong impact on the creep resistance of the Er₂O₃ thin films.