N. Guenifi, Dr. Shiromani Balmukund Rahi, T. Ghodbane
{"title":"Rigorous Study of Double Gate Tunneling Field Effect Transistor Structure Based on Silicon","authors":"N. Guenifi, Dr. Shiromani Balmukund Rahi, T. Ghodbane","doi":"10.1166/MAT.2018.1600","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":18271,"journal":{"name":"Materials Focus","volume":"139 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Focus","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/MAT.2018.1600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}