Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures

S. Kamiya, C. Chen, N. Shishido, M. Omiya, K. Koiwa, H. Sato, M. Nishida, T. Nakamura, T. Nokuo, T. Suzuki
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引用次数: 1

Abstract

Local apparent strength of interface between copper and cap layer on top was diverse depending on the crystal orientation underneath. For a comprehension of this diversity, physical adhesion energy to separate the interface was evaluated. It essentially does not include mechanical energy dissipating in plastic deformation in the process of crack extension. Sub-micron scale torsion test for elastic-plastic deformation properties and fracture tests on a number of different crystal orientations revealed that difference in adhesion energy is much smaller than difference in plastic dissipation energy. It is highly likely that small difference in the former is intensified through the latter, leading to a huge scatter in strength of LSI interconnect structures.
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铜damascene互连结构中Cu/SiN界面的粘附能及其与表观强度的关系
铜与盖层界面的局部视强度随晶体取向的不同而不同。为了理解这种多样性,对分离界面的物理粘附能进行了评估。它本质上不包括裂纹扩展过程中塑性变形耗散的机械能。亚微米尺度的弹塑性变形性能扭转试验和多个不同晶向的断裂试验表明,黏附能的差异远小于塑性耗散能的差异。前者的微小差异很有可能通过后者被强化,从而导致大规模集成电路互连结构强度的巨大分散。
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