STACKING FAULTS IN THE SINGLE CRYSTALS

Q4 Physics and Astronomy African Review of Physics Pub Date : 2009-10-30 DOI:10.15407/spqeo12.04.421
Mihir M. Vora, A. Vora
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引用次数: 5

Abstract

0 ≤ ≤ x have been grown by a direct vapour transport techn ique (DVT) in the laboratory. The structural characterizations of these crystals are made by XRD method. The particle size for a nu mber of reflections has been calculated using the Scherrer’s formula. A con siderable variation is shown in the deformation ( α ) and growth ( β ) fault probabilities in In xMoSe 2 ( ) 1 0 ≤ ≤ x single crystal due to off-stoichiometry, which pos sesses the stacking fault in the single crystal.
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单晶中的层错
0≤≤x在实验室通过直接蒸汽输送技术(DVT)生长。用XRD对这些晶体进行了结构表征。用舍勒公式计算了若干反射的粒子大小。in xMoSe 2() 10≤≤x单晶的形变(α)和生长(β)故障概率由于非化学计量而发生较大变化,说明单晶存在层错。
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来源期刊
African Review of Physics
African Review of Physics PHYSICS, MULTIDISCIPLINARY-
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