Distribution of the density of states of bonded hydrogen in amorphous hydrogenated silicon

R.A. Street
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引用次数: 17

Abstract

Hydrogen-induced metastability is analysed by a density of states distribution for bonded hydrogen, which described the alternative hydrogen sites and the effects of disorder. The metastability is explained by the redistribution of hydrogen following illumination, annealing or a shift of the Fermi energy. Hydrogen and defect equilibria are related to the hydrogen diffusion and the chemical potential. An estimate of the hydrogen density of states distribution, based on the weak bond model, is shown to be consistent with the measured defect density. Irreversible metastable changes are related to structural reconstructions which change the shape of the distribution, while the reversible changes correspond to a redistribution of hydrogen within an approximately constant density of states.

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非晶氢化硅中键合氢态密度的分布
通过键合氢的态密度分布分析了氢诱导亚稳态,描述了氢的替代位置和无序的影响。亚稳性可以用氢在光照、退火或费米能量移动后的再分布来解释。氢平衡和缺陷平衡与氢扩散和化学势有关。基于弱键模型估计的态分布氢密度与测量的缺陷密度是一致的。不可逆亚稳态变化与改变分布形状的结构重构有关,而可逆变化对应于氢在近似恒定密度的状态下的重新分布。
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