{"title":"Composition-dependent properties of MgxZn1−xO films by sputtering","authors":"Hui Li, Shibin Liu, E. Xie","doi":"10.1109/MACE.2011.5987130","DOIUrl":null,"url":null,"abstract":"The properties of MgxZn1−xO films dependent on composition were studied in this paper. The experiment showed that the composition of films prepared by sputtering was affected by ambient condition and annealing temperature. The increasing Mg content was in favor of increasing crystal quality of films, and didn't change the wurtzite structure of films. The band gap changed between 3.4 and 4.0 eV, which was dependent on Mg content in films and consistent well with the previous reported theory on alloyed films. These results above showed that MgxZn1−xO films by sputtering could be used as barrier layers in ZnO-based heterostructures.","PeriodicalId":6400,"journal":{"name":"2011 Second International Conference on Mechanic Automation and Control Engineering","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Second International Conference on Mechanic Automation and Control Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MACE.2011.5987130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The properties of MgxZn1−xO films dependent on composition were studied in this paper. The experiment showed that the composition of films prepared by sputtering was affected by ambient condition and annealing temperature. The increasing Mg content was in favor of increasing crystal quality of films, and didn't change the wurtzite structure of films. The band gap changed between 3.4 and 4.0 eV, which was dependent on Mg content in films and consistent well with the previous reported theory on alloyed films. These results above showed that MgxZn1−xO films by sputtering could be used as barrier layers in ZnO-based heterostructures.
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