V. Nebol’sin, Vladimir A. Yuriev, N. Swaikat, V. V. Korneeva, Evgeniy N. Vasnin
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引用次数: 0
Abstract
The paper provides a physical justification for the wettability conditions for a crystalline surface of a limited area by a small-volume catalytic liquid at the end of a growing nanowires (NW) characterized by a contact angle β, which contributes to a fundamental understanding of the nature of the contact angle of catalyst drops at the top of the NW. It is shown that under the conditions of stationary growth of NWs with a transverse singular face, there are only values of the angles β and γ (the angle of inclination of the side surface of the crystal to this face), which correspond to the minimum increment of the free energy of the three-phase system αLVcosβ + αSL = αSVcosγ and determine the stability of the catalyst drop at the top of the NW. With the growth of cylindrical NWs, the conditions of indifferent equilibrium are realized at the drop wetting perimeter. A drop, due to the dissolution of a crystallizing substance or its separation from a liquid solution, can take an equilibrium shape with a contact angle β that does not satisfy the equilibrium contact angle condition θ in the Young equation. A concentric break (rib) at the NW tip should increase the observed wetting angle θ and lead to contact angle hysteresis. The restrictions imposed on the value of the contact angle of a stable catalyst drop at the top of the NW are determined. The catalyst drop will take an equilibrium shape if the hysteresis angle β is in the range θ < β ≤ θ' + γ (θ' is the wetting angle of the NW side walls). For the growth of semiconductor NWs in the form of a straight cylinder, γ = 90° and therefore always β > 90°. It is shown that the direction of displacement of the three-phase line relative to the droplet surface is determined by the growth angle φ0: for the nonwetting growth mode of NWs (with a transverse face) φ0 = β – γ; for the wetting growth mode (with the end surface curved near the three-phase line)
期刊介绍:
Journal “Radioelectronics. Nanosystems. Information Technologies” (abbr RENSIT) publishes original articles, reviews and brief reports, not previously published, on topical problems in radioelectronics (including biomedical) and fundamentals of information, nano- and biotechnologies and adjacent areas of physics and mathematics. The authors of the journal are academicians, corresponding members and foreign members of the Russian Academy of Natural Sciences (RANS) and their colleagues, as well as other russian and foreign authors on the proposal of the members of RANS, which can be obtained by the author before sending articles to the editor or after its arrival on the recommendation of a member of the editorial board or another member of the RANS, who gave the opinion on the article at the request of the editior. The editors will accept articles in both Russian and English languages. Articles are internally peer reviewed (double-blind peer review) by members of the Editorial Board. Some articles undergo external review, if necessary. Designed for researchers, graduate students, physics students of senior courses and teachers. It turns out 2 times a year (that includes 2 rooms)