Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells

Haoting Shen, Yu A. Yuwen, Xin Wang, J. I. Ramírez, Yuanyuan Li, Y. Ke, C. Kendrick, N. Podraza, T. Jackson, E. Dickey, T. Mayer, J. Redwing
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引用次数: 4

Abstract

Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200°C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (Voc>0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>1018 cm-3), the short-circuit current density (Jsc) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.
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c-Si掺杂密度对本征薄层(HIT)径向结太阳能电池异质结的影响
采用不同掺杂密度的p型晶体硅(c-Si)晶片制备了基于异质结本征薄层(HIT)结构的径向结硅柱阵列太阳能电池。由等离子体增强化学气相沉积(PECVD)在低温(200°C)下沉积的本征/n型氢化非晶硅(a-Si:H)组成的HIT结构可以有效地钝化p型硅柱阵列的高表面积,从而获得与平面器件相当的开路电压(Voc>0.5)。在高c-Si掺杂密度(>1018 cm-3)下,径向结器件的短路电流密度(Jsc)和能量转换效率均高于平面器件,表明径向结结构中的载流子收集得到改善。
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