{"title":"Search of a needle in Haystack : Analysis and reliability of nanoelectronic devices","authors":"M. Radhakrishnan","doi":"10.1109/ESCINANO.2010.5701096","DOIUrl":null,"url":null,"abstract":"As the device technology is progressing from nanometer level towards atomic scale, the famous comment “There is plenty of room at the bottom” by Richard Feynman [1] 50 years ago needs to be studied carefully and understood in detail. This has to be viewed alongwith the comment by a leading device manufacturer “There is plenty of difficulty near the bottom” [2]. Why this discrepancy in observations?","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESCINANO.2010.5701096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
As the device technology is progressing from nanometer level towards atomic scale, the famous comment “There is plenty of room at the bottom” by Richard Feynman [1] 50 years ago needs to be studied carefully and understood in detail. This has to be viewed alongwith the comment by a leading device manufacturer “There is plenty of difficulty near the bottom” [2]. Why this discrepancy in observations?
随着器件技术从纳米级向原子级发展，50年前理查德·费曼(Richard Feynman)的著名论断“底部有足够的空间”(There is plenty of room at the bottom)需要仔细研究和详细理解。这必须与一家领先的设备制造商的评论“在底部附近有很多困难”一起看待。为什么观察结果会有这种差异?
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