Wide band transimpedance amplifier at 3 GHz IN 130 nm technology

A. Kara-Omar, C. Vialon, D. Dragomirescu, A. Coustou, R. Plana
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引用次数: 2

Abstract

This paper presents a transimpedance amplifier designed in ST Microelectronics BiCMOS9MW 130 nm technology. This circuit works as IF (intermediate frequency) buffer for mixer circuits. It presents a 37 dBOmega transimpedance gain, low input impedance, and 100Omega differential output impedance.
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130纳米技术下的3 GHz宽带透阻放大器
介绍了一种采用ST微电子BiCMOS9MW 130 nm工艺设计的跨阻放大器。该电路作为中频缓冲器用于混频器电路。它具有37 dboma的跨阻增益,低输入阻抗和100 ω的差分输出阻抗。
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