{"title":"Surface Potential Based Compact Model for Thin Film Transistor","authors":"Ling Li","doi":"10.1109/IFETC.2018.8583907","DOIUrl":null,"url":null,"abstract":"Amorphous-InGaZnO (a-IGZO) TFTs are increasingly important for the circuit application, such as flexible display and transparent TFTs. Oxide semiconductor TFTs, such as a-IGZO TFTs, are expected to be a promising candidate constructing RFID tags [1] . A circuit friendly compact model of a-IGZO is therefore required. Due to the different charge transport mechanism, compact model for a-IGZO TFTs cannot directly use organic TFT or amorphous TFT model [2] .","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"12 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Flexible Electronics Technology Conference (IFETC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFETC.2018.8583907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Amorphous-InGaZnO (a-IGZO) TFTs are increasingly important for the circuit application, such as flexible display and transparent TFTs. Oxide semiconductor TFTs, such as a-IGZO TFTs, are expected to be a promising candidate constructing RFID tags [1] . A circuit friendly compact model of a-IGZO is therefore required. Due to the different charge transport mechanism, compact model for a-IGZO TFTs cannot directly use organic TFT or amorphous TFT model [2] .
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