Nanostructured Cu2ZnSnS4 Thin Films on Porous-Si Wafer

Abstract

 Nanostructure CZTS thin film was fabricated by electrodeposition technique. To manufacture the heterojunctions, p-type c-Si wafers of (100) orientation were used as a substrate.  Before anodization, the surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water (at temperature of 80°С and ethyl alcohol and then dried in air. The current-voltage characteristics of the CZTS /PS solar cell under dark conditions show that forward bias current variation approximately exponentially with voltage bias. The capacitance for Nano- CZTS /PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That heterojunctions demonstrate good photo-response in the wavelength range of 510 - 650 nm.