An ultra-fast C-NOT gate based on electric dipole coupling between nitrogen-vacancy color centers

Abstract

: Our research proposes a new scheme to build a controlled-NOT ( C-NOT ) gate between two adjacent nitrogen-vacancy ( NV ) color centers in diamond , using electric dipole coupling between adjacent NVs and selective resonant laser excitation. The electric dipole coupling between two NVs causes the state dependent energy shift. This allows to apply resonant laser excitation to realize the C-phase gate. Combined with a single qubit operation , C-NOT gate can be implemented quickly. Between two adjacent 10 nm NVs , the C-NOT gate can operate up to 120 ns faster than the traditional magnetic dipole coupling method by 2 magnitudes. In order to reduce the effect of a spontaneous emission , we propose to use a non-resonant cavity to suppress the spontaneous emission. The simulation results show that the C-phase gate fidelity can reach 98 . 88 % . Finally , the scheme is extended to a one-dimensional NV spin chain.