Enhanced grain growth in polycrystalline CuInSe2 using rapid thermal processing

Abstract

Rapid thermal processing of precursor small-grained (less than or equal to 1 μm) CuInSe₂ thin films can result in enhanced grain growth on the order of 100 μm under certain processing conditions. Crystal growth was accompanied by large increases (×10) in the X-ray diffraction intensity of the (112) peak, indicating near-perfect crystal growth in the [221] direction. Single-crystal quality was verified by selected-area electron channeling. However, at present, this effect occurs in conjuction with excessive void and pinhole formation between single-crystal platelets. These voids are often decorated with relatively selenium-deficient phases.